PMID- 22400265
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120403
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 11
IP  - 10
DP  - 2011 Oct
TI  - Atomic layer deposition of aluminum oxide films for carbon nanotube network 
      transistor passivation.
PG  - 8818-25
AB  - Ultra-thin (2-5 nm thick) aluminum oxide layers were grown on non-functionalized 
      individual single walled carbon nanotubes (SWCNT) and their bundles by atomic 
      layer deposition (ALD) technique in order to investigate the mechanism of the 
      coating process. Transmission electron microscopy (TEM) was used to examine the 
      uniformity and conformality of the coatings grown at different temperatures (80 
      degrees C or 220 degrees C) and with different precursors for oxidation (water 
      and ozone). We found that bundles of SWCNTs were coated continuously, but at the 
      same time, bare individual nanotubes remained uncoated. The successful coating of 
      bundles was explained by the formation of interstitial pores between the 
      individual SWCNTs constituting the bundle, where the precursor molecules can 
      adhere, initiating the layer growth. Thicker alumina layers (20-35 nm thick) were 
      used for the coating of bottom-gated SWCNT-network based field effect transistors 
      (FETs). ALD layers, grown at different conditions, were found to influence the 
      performance of the SWCNT-network FETs: low temperature ALD layers caused the 
      ambipolarity of the channel and pronounced n-type conduction, whereas high 
      temperature ALD processes resulted in hysteresis suppression in the transfer 
      characteristics of the SWCNT transistors and preserved p-type conduction. Fixed 
      charges in the ALD layer have been considered as the main factor influencing the 
      conduction change of the SWCNT network based transistors.
FAU - Grigoras, Kestutis
AU  - Grigoras K
AD  - Department of Micro and Nanosciences, Aalto University School of Science and 
      Technology, P O. Box 13500, Fl-00076 Aalto, Finland.
FAU - Zavodchikova, Marina Y
AU  - Zavodchikova MY
FAU - Nasibulin, Albert G
AU  - Nasibulin AG
FAU - Kauppinen, Esko I
AU  - Kauppinen EI
FAU - Ermolov, Vladimir
AU  - Ermolov V
FAU - Franssila, Sami
AU  - Franssila S
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2012/03/10 06:00
MHDA- 2012/03/10 06:01
CRDT- 2012/03/10 06:00
PHST- 2012/03/10 06:00 [entrez]
PHST- 2012/03/10 06:00 [pubmed]
PHST- 2012/03/10 06:01 [medline]
AID - 10.1166/jnn.2011.3471 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2011 Oct;11(10):8818-25. doi: 10.1166/jnn.2011.3471.