PMID- 22422712
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120905
LR  - 20120410
IS  - 1521-3765 (Electronic)
IS  - 0947-6539 (Linking)
VI  - 18
IP  - 16
DP  - 2012 Apr 16
TI  - n-Type reduced graphene oxide field-effect transistors (FETs) from photoactive 
      metal oxides.
PG  - 4923-9
LID - 10.1002/chem.201103967 [doi]
AB  - Graphene is of considerable interest as a next-generation semiconductor material 
      to serve as a possible substitute for silicon. For real device applications with 
      complete circuits, effective n-type graphene field effect transistors (FETs) 
      capable of operating even under atmospheric conditions are necessary. In this 
      study, we investigated n-type reduced graphene oxide (rGO) FETs of photoactive 
      metal oxides, such as TiO(2) and ZnO. These metal oxide doped FETs showed slight 
      n-type electric properties without irradiation. Under UV light these photoactive 
      materials readily generated electrons and holes, and the generated electrons 
      easily transferred to graphene channels. As a result, the graphene FET showed 
      strong n-type electric behavior and its drain current was increased. These 
      n-doping effects showed saturation curves and slowly returned back to their 
      original state in darkness. Finally, the n-type rGO FET was also highly stable in 
      air due to the use of highly resistant metal oxides and robust graphene as a 
      channel.
CI  - Copyright (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
FAU - Yoo, Heejoun
AU  - Yoo H
AD  - NCRI, Center for Smart Molecular Memory, Department of Chemistry, Department of 
      Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
FAU - Kim, Youngmin
AU  - Kim Y
FAU - Lee, Junghyun
AU  - Lee J
FAU - Lee, Hyemi
AU  - Lee H
FAU - Yoon, Yeoheung
AU  - Yoon Y
FAU - Kim, Giyoun
AU  - Kim G
FAU - Lee, Hyoyoung
AU  - Lee H
LA  - eng
PT  - Journal Article
DEP - 20120315
PL  - Germany
TA  - Chemistry
JT  - Chemistry (Weinheim an der Bergstrasse, Germany)
JID - 9513783
EDAT- 2012/03/17 06:00
MHDA- 2012/03/17 06:01
CRDT- 2012/03/17 06:00
PHST- 2011/12/19 00:00 [received]
PHST- 2012/03/17 06:00 [entrez]
PHST- 2012/03/17 06:00 [pubmed]
PHST- 2012/03/17 06:01 [medline]
AID - 10.1002/chem.201103967 [doi]
PST - ppublish
SO  - Chemistry. 2012 Apr 16;18(16):4923-9. doi: 10.1002/chem.201103967. Epub 2012 Mar 
      15.