PMID- 22512336
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120910
LR  - 20120522
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 6
IP  - 5
DP  - 2012 May 22
TI  - Remote doping and Schottky barrier formation in strongly quantum confined single 
      PbSe nanowire field-effect transistors.
PG  - 4328-34
LID - 10.1021/nn3009382 [doi]
AB  - We report studies of charge injection and transport in ambipolar, predominantly 
      n-type, and unipolar p-type single, strongly quantum confined PbSe nanowire (NW) 
      field effect transistors (FETs). The PbSe NW FETs operate as Schottky barrier 
      FETs in which the Fermi level is pinned near midgap, consistent with the low 
      ionicity of PbSe, and is nearly invariant with semiconductor doping. Electron and 
      hole mobilities increase monotonically with decreasing temperature, dominated at 
      high temperature by electron-phonon scattering with no evidence of scattering at 
      low temperatures. Transport in NWs is consistent with their single crystalline 
      nature. Surface oxygen used to dope the NWs acts remotely, providing a promising 
      route to dope nanostructures.
FAU - Oh, Soong Ju
AU  - Oh SJ
AD  - Department of Materials Science and Engineering, University of Pennsylvania, 
      Philadelphia, Pennsylvania 19104, USA.
FAU - Kim, David K
AU  - Kim DK
FAU - Kagan, Cherie R
AU  - Kagan CR
LA  - eng
PT  - Journal Article
DEP - 20120427
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
EDAT- 2012/04/20 06:00
MHDA- 2012/04/20 06:01
CRDT- 2012/04/20 06:00
PHST- 2012/04/20 06:00 [entrez]
PHST- 2012/04/20 06:00 [pubmed]
PHST- 2012/04/20 06:01 [medline]
AID - 10.1021/nn3009382 [doi]
PST - ppublish
SO  - ACS Nano. 2012 May 22;6(5):4328-34. doi: 10.1021/nn3009382. Epub 2012 Apr 27.