PMID- 22583262
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120904
LR  - 20120515
IS  - 1089-7690 (Electronic)
IS  - 0021-9606 (Linking)
VI  - 136
IP  - 17
DP  - 2012 May 7
TI  - Nanowelding of carbon nanotube-metal contacts: an effective way to control the 
      Schottky barrier and performance of carbon nanotube based field effect 
      transistors.
PG  - 174704
LID - 10.1063/1.4711082 [doi]
AB  - Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well 
      known to be crucial for the performance of CNT based field effect transistors 
      (FETs). Through first principles calculations we show that a nanowelding process 
      can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting 
      in significantly improved conductivity of CNT-based FETs. The proposed 
      nanowelding can be realized by either laser local heating or a heating process 
      via a controllable pulse current. Results presented in this paper may have great 
      implications in future design and applications of CNT-based electronics.
FAU - Nurbawono, Argo
AU  - Nurbawono A
AD  - Department of Physics, National University of Singapore, 2 Science Drive 3, 
      Singapore.
FAU - Zhang, Aihua
AU  - Zhang A
FAU - Cai, Yongqing
AU  - Cai Y
FAU - Wu, Yihong
AU  - Wu Y
FAU - Feng, Yuan Ping
AU  - Feng YP
FAU - Zhang, Chun
AU  - Zhang C
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Chem Phys
JT  - The Journal of chemical physics
JID - 0375360
EDAT- 2012/05/16 06:00
MHDA- 2012/05/16 06:01
CRDT- 2012/05/16 06:00
PHST- 2012/05/16 06:00 [entrez]
PHST- 2012/05/16 06:00 [pubmed]
PHST- 2012/05/16 06:01 [medline]
AID - 10.1063/1.4711082 [doi]
PST - ppublish
SO  - J Chem Phys. 2012 May 7;136(17):174704. doi: 10.1063/1.4711082.