PMID- 22751205
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20121105
LR  - 20120711
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 23
IP  - 30
DP  - 2012 Aug 3
TI  - Reducing the contact resistance of SiNW devices by employing a heavily doped 
      carrier injection layer.
PG  - 305701
LID - 10.1088/0957-4484/23/30/305701 [doi]
AB  - Silicon nanowires (SiNWs) are promising building blocks for future electronic 
      devices. In SiNW-based devices, reducing the contact resistance of SiNW-metal as 
      much as possible is critically important. Here we report a simple fabrication 
      approach for SiNW field effect transistors (FETs) with low contact resistances by 
      employing a heavily doped carrier injection layer wrapped around SiNWs at the 
      contact region. Both n- and p-type SiNW-FET devices with carrier injection layers 
      were investigated, the contact resistances were one order smaller than those 
      without carrier injection layers and only contribute less than 14.8% for n-type 
      devices and 11.4% for p-type devices, respectively, to the total resistance. Such 
      low contact resistance guarantees the device characteristics mainly from the 
      channel region of SiNW-based devices.
FAU - Liu, Donghua
AU  - Liu D
AD  - Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for 
      Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 
      Beijing 100190, People's Republic of China.
FAU - Shi, Zhiwen
AU  - Shi Z
FAU - Zhang, Lianchang
AU  - Zhang L
FAU - He, Congli
AU  - He C
FAU - Zhang, Jing
AU  - Zhang J
FAU - Cheng, Meng
AU  - Cheng M
FAU - Yang, Rong
AU  - Yang R
FAU - Tian, Xuezeng
AU  - Tian X
FAU - Bai, Xuedong
AU  - Bai X
FAU - Shi, Dongxia
AU  - Shi D
FAU - Zhang, Guangyu
AU  - Zhang G
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20120702
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2012/07/04 06:00
MHDA- 2012/07/04 06:01
CRDT- 2012/07/04 06:00
PHST- 2012/07/04 06:00 [entrez]
PHST- 2012/07/04 06:00 [pubmed]
PHST- 2012/07/04 06:01 [medline]
AID - 10.1088/0957-4484/23/30/305701 [doi]
PST - ppublish
SO  - Nanotechnology. 2012 Aug 3;23(30):305701. doi: 10.1088/0957-4484/23/30/305701. 
      Epub 2012 Jul 2.