PMID- 22817278
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20121113
LR  - 20130304
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 4
IP  - 8
DP  - 2012 Aug
TI  - Field-effect transistors based on silicon nanowire arrays: effect of the good and 
      the bad silicon nanowires.
PG  - 4251-8
LID - 10.1021/am300961d [doi]
AB  - Aligned arrays of silicon nanowires (aa-Si NWs) allow the exploitation of Si NWs 
      in a scalable way. Previous studies explored the influence of the Si NWs' number, 
      doping density, and diameter on the related electrical performance. Nevertheless, 
      the origin of the observed effects still not fully understood. Here, we aim to 
      provide an understanding on the effect of channel number on the fundamental 
      parameters of aa-Si NW field effect transistors (FETs). Toward this end, we have 
      fabricated and characterized 87 FET devices with varied number of Si NWs, which 
      were grown by chemical vapor deposition with gold catalyst. The results show that 
      FETs with Si NWs above a threshold number (n > 80) exhibit better device 
      uniformity, but generally lower device performance, than FETs with lower number 
      of Si NWs (3 </= n < 80). Complementary analysis indicates that the obtained 
      discrepancies could be explained by a weighted contribution of two main groups of 
      Si NWs: (i) a group of gold-free Si NWs that exhibit high and uniform electrical 
      characteristics; and (ii) a group of gold-doped Si NWs that exhibit inferior 
      electrical characteristics. These findings are validated by a binomial model that 
      consider the aa-Si NW FETs via a weighted combination of FETs of individual Si 
      NWs. Overall, the obtained results suggest that the criterions used currently for 
      evaluating the device performance (e.g., uniform diameter, length, and shape of 
      Si NWs) do not necessarily guarantee uniform or satisfying electrical 
      characteristics, raising the need for new growth processes and/or advanced 
      sorting techniques of electrically homogeneous Si NWs.
FAU - Wang, Bin
AU  - Wang B
AD  - The Department of Chemical Engineering and the Russell Berrie Nanotechnology 
      Institute, Technion - Israel Institute of Technology, Haifa 32000, Israel.
FAU - Stelzner, Thomas
AU  - Stelzner T
FAU - Dirawi, Rawi
AU  - Dirawi R
FAU - Assad, Ossama
AU  - Assad O
FAU - Shehada, Nisreen
AU  - Shehada N
FAU - Christiansen, Silke
AU  - Christiansen S
FAU - Haick, Hossam
AU  - Haick H
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20120801
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
EDAT- 2012/07/24 06:00
MHDA- 2012/07/24 06:01
CRDT- 2012/07/24 06:00
PHST- 2012/07/24 06:00 [entrez]
PHST- 2012/07/24 06:00 [pubmed]
PHST- 2012/07/24 06:01 [medline]
AID - 10.1021/am300961d [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2012 Aug;4(8):4251-8. doi: 10.1021/am300961d. Epub 
      2012 Aug 1.