PMID- 22966666
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120927
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 12
IP  - 7
DP  - 2012 Jul
TI  - Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire 
      field effect transistors.
PG  - 5839-42
AB  - The electrical properties of 10-nm-radius n-type gate all around (GAA) twin Si 
      nanowire field effect transistors (TSNWFETs) and field effect transistors (FETs) 
      without nanowires were investigated to understand their device characteristics. 
      The electrical characteristics of the GAA TSNWFETs and FETs with bulk boron 
      concentrations of 1 x 10(18) and 1 x 10(16) cm(-3) were simulated by using 
      three-dimensional technology computer-aided design simulation tools of sentaurus 
      taking into account quantum effects. The simulation results showed that the 
      on-current level of the TSNWFETs was larger than that of FETs, and the 
      subthreshold swing and the drain induced barrier lowing of the TSNWFETs were 
      smaller than those of FETs. The current density and conduction band edge profiles 
      in the TSNWFETs clarified the dominant current paths. The simulation results 
      showed that the on-current/off-current ratio increased with increasing bulk boron 
      concentration, and the stand-by current level decreased.
FAU - Jang, S H
AU  - Jang SH
AD  - Department of Electronics and Computer Engineering, Hanyang University, 17 
      Haengdang-Dong, Seongdong-Gu, Seoul 133-791, Korea.
FAU - Ryu, J T
AU  - Ryu JT
FAU - You, J H
AU  - You JH
FAU - Kim, T W
AU  - Kim TW
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2012/09/13 06:00
MHDA- 2012/09/13 06:01
CRDT- 2012/09/13 06:00
PHST- 2012/09/13 06:00 [entrez]
PHST- 2012/09/13 06:00 [pubmed]
PHST- 2012/09/13 06:01 [medline]
AID - 10.1166/jnn.2012.6392 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2012 Jul;12(7):5839-42. doi: 10.1166/jnn.2012.6392.