PMID- 23006618 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20121122 LR - 20240321 IS - 1556-276X (Electronic) IS - 1931-7573 (Print) IS - 1556-276X (Linking) VI - 7 IP - 1 DP - 2012 Sep 24 TI - Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion. PG - 520 LID - 10.1186/1556-276X-7-520 [doi] AB - We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 mum2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE. FAU - Tong, Cunzhu AU - Tong C AD - State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China. ljwang2000@hotmail.com. FAU - Yoon, Soon Fatt AU - Yoon SF FAU - Wang, Lijun AU - Wang L LA - eng PT - Journal Article DEP - 20120924 PL - United States TA - Nanoscale Res Lett JT - Nanoscale research letters JID - 101279750 PMC - PMC3502451 EDAT- 2012/09/26 06:00 MHDA- 2012/09/26 06:01 PMCR- 2012/09/24 CRDT- 2012/09/26 06:00 PHST- 2012/08/23 00:00 [received] PHST- 2012/09/18 00:00 [accepted] PHST- 2012/09/26 06:00 [entrez] PHST- 2012/09/26 06:00 [pubmed] PHST- 2012/09/26 06:01 [medline] PHST- 2012/09/24 00:00 [pmc-release] AID - 1556-276X-7-520 [pii] AID - 10.1186/1556-276X-7-520 [doi] PST - epublish SO - Nanoscale Res Lett. 2012 Sep 24;7(1):520. doi: 10.1186/1556-276X-7-520.