PMID- 23025663 OWN - NLM STAT- MEDLINE DCOM- 20130516 LR - 20121127 IS - 1936-086X (Electronic) IS - 1936-0851 (Linking) VI - 6 IP - 11 DP - 2012 Nov 27 TI - Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors. PG - 9657-61 LID - 10.1021/nn303070p [doi] AB - Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 degrees C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of approximately 10(3). FAU - Li, Shisheng AU - Li S AD - Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China. FAU - Liu, Chang AU - Liu C FAU - Hou, Peng-Xiang AU - Hou PX FAU - Sun, Dong-Ming AU - Sun DM FAU - Cheng, Hui-Ming AU - Cheng HM LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't DEP - 20121004 PL - United States TA - ACS Nano JT - ACS nano JID - 101313589 RN - 0 (Nanotubes, Carbon) SB - IM MH - Crystallization/methods MH - Equipment Design MH - Equipment Failure Analysis MH - Hot Temperature MH - Materials Testing MH - Nanotubes, Carbon/*chemistry/*ultrastructure MH - Particle Size MH - Semiconductors MH - *Transistors, Electronic EDAT- 2012/10/03 06:00 MHDA- 2013/05/17 06:00 CRDT- 2012/10/03 06:00 PHST- 2012/10/03 06:00 [entrez] PHST- 2012/10/03 06:00 [pubmed] PHST- 2013/05/17 06:00 [medline] AID - 10.1021/nn303070p [doi] PST - ppublish SO - ACS Nano. 2012 Nov 27;6(11):9657-61. doi: 10.1021/nn303070p. Epub 2012 Oct 4.