PMID- 23073187
OWN - NLM
STAT- MEDLINE
DCOM- 20130409
LR  - 20121030
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 4
IP  - 22
DP  - 2012 Nov 21
TI  - Fast and non-invasive conductivity determination by the dielectric response of 
      reduced graphene oxide: an electrostatic force microscopy study.
PG  - 7231-6
LID - 10.1039/c2nr32640j [doi]
AB  - The high dispersion found in the literature for the conductivity of Reduced 
      Graphene Oxide (RGO) layers makes it highly desirable to develop fast and 
      non-invasive methods for their characterization. Here we show that Electrostatic 
      Force Microscopy (EFM) is an in situ, fast, and contactless technique to evaluate 
      the conductivity of chemically derived graphene layers. The dielectric response 
      of RGO flakes is observed to depend on their conductivity in the range of 0-3 S 
      m(-1). Interestingly, we also find that for electrostatic purposes, a graphene 
      layer is equivalent to an extremely thin dielectric layer with an effective 
      permittivity (epsilon(eff)) that depends on the conductivity of the layers and spans 
      from 5 for the insulating layers, to 2000 for the more conductive ones. We 
      discuss how these high values of epsilon(eff) are a consequence of the incomplete 
      screening of electric fields through graphene layers.
FAU - Gomez-Navarro, Cristina
AU  - Gomez-Navarro C
AD  - Departamento de Fisica de la Materia Condensada and Centro de Investigacion en 
      Fisica de la Materia Condensada (IFIMAC), Universidad Autonoma de Madrid, 28049, 
      Madrid, Spain. cristina.gomez@uam.es
FAU - Guzman-Vazquez, Francisco J
AU  - Guzman-Vazquez FJ
FAU - Gomez-Herrero, Julio
AU  - Gomez-Herrero J
FAU - Saenz, Juan J
AU  - Saenz JJ
FAU - Sacha, G M
AU  - Sacha GM
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
RN  - 0 (Oxides)
RN  - 7782-42-5 (Graphite)
SB  - IM
MH  - *Electric Conductivity
MH  - Graphite/*chemistry
MH  - Microscopy, Atomic Force
MH  - Models, Theoretical
MH  - Oxidation-Reduction
MH  - Oxides/*chemistry
MH  - Static Electricity
EDAT- 2012/10/18 06:00
MHDA- 2013/04/10 06:00
CRDT- 2012/10/18 06:00
PHST- 2012/10/18 06:00 [entrez]
PHST- 2012/10/18 06:00 [pubmed]
PHST- 2013/04/10 06:00 [medline]
AID - 10.1039/c2nr32640j [doi]
PST - ppublish
SO  - Nanoscale. 2012 Nov 21;4(22):7231-6. doi: 10.1039/c2nr32640j.