PMID- 23128783
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20130506
LR  - 20121113
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 23
IP  - 48
DP  - 2012 Dec 7
TI  - Investigation of threshold voltage instability induced by gate bias stress in ZnO 
      nanowire field effect transistors.
PG  - 485201
LID - 10.1088/0957-4484/23/48/485201 [doi]
AB  - We investigated the threshold voltage instability induced by gate bias (V(G)) 
      stress in ZnO nanowire (NW) field effect transistors (FETs). By increasing the 
      V(G) sweep ranges and repeatedly measuring the electrical characteristics of the 
      ZnO NW FETs, the V(G) stress was produced in the dielectric layer underneath the 
      ZnO NW. Consequently, the electrical conductance of the ZnO NW FETs decreased, 
      and the threshold voltage shifted towards the positive V(G) direction. This 
      threshold voltage instability induced by the V(G) stress is associated with the 
      trapping of charges in the interface trap sites located in the ZnO NW-dielectric 
      interface. Our study will be helpful for understanding the stability of ZnO NW 
      FETs during repetitive operations.
FAU - Choe, Minhyeok
AU  - Choe M
AD  - School of Materials Science and Engineering, Gwangju Institute of Science and 
      Technology, Gwangju 500-712, Korea.
FAU - Park, Woojin
AU  - Park W
FAU - Kang, Jang-Won
AU  - Kang JW
FAU - Jeong, Sehee
AU  - Jeong S
FAU - Hong, Woong-Ki
AU  - Hong WK
FAU - Lee, Byoung Hun
AU  - Lee BH
FAU - Park, Seong-Ju
AU  - Park SJ
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20121106
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2012/11/07 06:00
MHDA- 2012/11/07 06:01
CRDT- 2012/11/07 06:00
PHST- 2012/11/07 06:00 [entrez]
PHST- 2012/11/07 06:00 [pubmed]
PHST- 2012/11/07 06:01 [medline]
AID - 10.1088/0957-4484/23/48/485201 [doi]
PST - ppublish
SO  - Nanotechnology. 2012 Dec 7;23(48):485201. doi: 10.1088/0957-4484/23/48/485201. 
      Epub 2012 Nov 6.