PMID- 23194252
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20121220
LR  - 20211021
IS  - 1556-276X (Electronic)
IS  - 1931-7573 (Print)
IS  - 1556-276X (Linking)
VI  - 7
IP  - 1
DP  - 2012 Nov 29
TI  - Nanoscale electrical property studies of individual GeSi quantum rings by 
      conductive scanning probe microscopy.
PG  - 659
LID - 10.1186/1556-276X-7-659 [doi]
AB  - The nanoscale electrical properties of individual self-assembled GeSi quantum 
      rings (QRs) were studied by scanning probe microscopy-based techniques. The 
      surface potential distributions of individual GeSi QRs are obtained by scanning 
      Kelvin microscopy (SKM). Ring-shaped work function distributions are observed, 
      presenting that the QRs' rim has a larger work function than the QRs' central 
      hole. By combining the SKM results with those obtained by conductive atomic force 
      microscopy and scanning capacitance microscopy, the correlations between the 
      surface potential, conductance, and carrier density distributions are revealed, 
      and a possible interpretation for the QRs' conductance distributions is 
      suggested.
FAU - Lv, Yi
AU  - Lv Y
AD  - State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, 
      China. xjyang@fudan.edu.cn.
FAU - Cui, Jian
AU  - Cui J
FAU - Jiang, Zuimin M
AU  - Jiang ZM
FAU - Yang, Xinju
AU  - Yang X
LA  - eng
PT  - Journal Article
DEP - 20121129
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC3524759
EDAT- 2012/12/01 06:00
MHDA- 2012/12/01 06:01
PMCR- 2012/11/29
CRDT- 2012/12/01 06:00
PHST- 2012/10/11 00:00 [received]
PHST- 2012/11/21 00:00 [accepted]
PHST- 2012/12/01 06:00 [entrez]
PHST- 2012/12/01 06:00 [pubmed]
PHST- 2012/12/01 06:01 [medline]
PHST- 2012/11/29 00:00 [pmc-release]
AID - 1556-276X-7-659 [pii]
AID - 10.1186/1556-276X-7-659 [doi]
PST - epublish
SO  - Nanoscale Res Lett. 2012 Nov 29;7(1):659. doi: 10.1186/1556-276X-7-659.