PMID- 23324538
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20130729
LR  - 20130123
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 24
IP  - 6
DP  - 2013 Feb 15
TI  - Composition and conductance distributions of single GeSi quantum rings studied by 
      conductive atomic force microscopy combined with selective chemical etching.
PG  - 065702
LID - 10.1088/0957-4484/24/6/065702 [doi]
AB  - Atomic force microscopy imaging combined with selective chemical etching is 
      employed to quantitatively investigate three-dimensional (3D) composition 
      distributions of single GeSi quantum rings (QRs). In addition, the 3D 
      quantitative composition distributions and the corresponding conductance 
      distributions are simultaneously obtained on the same single GeSi QRs by 
      conductive atomic force microscopy combined with selective chemical etching, 
      allowing us to investigate the correlations between the conductance and 
      composition distributions of single QRs. The results show that the QRs' central 
      holes have higher Ge content, but exhibit lower conductance, indicating that the 
      QRs' conductance distribution is not consistent with their composition 
      distribution. By comparing the topography, composition and conductance profiles 
      of the same single QRs before and after different etching processes, it is found 
      that the conductance distributions of GeSi QRs do not vary with the change of 
      composition distribution. Instead, the QRs' conductance distributions are found 
      to be consistent with their topographic shapes, which can be supposed to be due 
      to the shape determined electronic structures.
FAU - Lv, Y
AU  - Lv Y
AD  - State Key Laboratory of Surface Physics and Physics Department, Fudan University, 
      Shanghai 200433, People's Republic of China.
FAU - Cui, J
AU  - Cui J
FAU - Jiang, Z M
AU  - Jiang ZM
FAU - Yang, X J
AU  - Yang XJ
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20130116
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2013/01/18 06:00
MHDA- 2013/01/18 06:01
CRDT- 2013/01/18 06:00
PHST- 2013/01/18 06:00 [entrez]
PHST- 2013/01/18 06:00 [pubmed]
PHST- 2013/01/18 06:01 [medline]
AID - 10.1088/0957-4484/24/6/065702 [doi]
PST - ppublish
SO  - Nanotechnology. 2013 Feb 15;24(6):065702. doi: 10.1088/0957-4484/24/6/065702. 
      Epub 2013 Jan 16.