PMID- 23340850
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20130816
LR  - 20130201
IS  - 1463-9084 (Electronic)
IS  - 1463-9076 (Linking)
VI  - 15
IP  - 8
DP  - 2013 Feb 28
TI  - Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire 
      field-effect transistors.
PG  - 2660-4
LID - 10.1039/c3cp44027c [doi]
AB  - We have fabricated transparent top-gate ZnO nanowire (NW) field effect 
      transistors (FETs) on glass and measured their trap density-of-states (DOS) at 
      the dielectric/ZnO NW interface with monochromatic photon beams during their 
      operation. Our photon-probe method showed clear signatures of charge trap DOS at 
      the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. 
      The DOS information was utilized for the photo-detecting application of our 
      transparent NW-FETs, which demonstrated fast and sensitive photo-detection of 
      visible lights.
FAU - Raza, Syed Raza Ali
AU  - Raza SR
AD  - Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, 
      Korea.
FAU - Lee, Young Tack
AU  - Lee YT
FAU - Chang, Youn-Gyoung
AU  - Chang YG
FAU - Jeon, Pyo Jin
AU  - Jeon PJ
FAU - Kim, Jae Hoon
AU  - Kim JH
FAU - Ha, Ryong
AU  - Ha R
FAU - Choi, Heon-Jin
AU  - Choi HJ
FAU - Im, Seongil
AU  - Im S
LA  - eng
PT  - Journal Article
DEP - 20130122
PL  - England
TA  - Phys Chem Chem Phys
JT  - Physical chemistry chemical physics : PCCP
JID - 100888160
EDAT- 2013/01/24 06:00
MHDA- 2013/01/24 06:01
CRDT- 2013/01/24 06:00
PHST- 2013/01/24 06:00 [entrez]
PHST- 2013/01/24 06:00 [pubmed]
PHST- 2013/01/24 06:01 [medline]
AID - 10.1039/c3cp44027c [doi]
PST - ppublish
SO  - Phys Chem Chem Phys. 2013 Feb 28;15(8):2660-4. doi: 10.1039/c3cp44027c. Epub 2013 
      Jan 22.