PMID- 23403849 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20130729 LR - 20130220 IS - 1361-6528 (Electronic) IS - 0957-4484 (Linking) VI - 24 IP - 9 DP - 2013 Mar 8 TI - Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors. PG - 095202 LID - 10.1088/0957-4484/24/9/095202 [doi] AB - We investigated the effects of passivation on the electrical characteristics of molybdenum disulfide (MoS(2)) field effect transistors (FETs) under nitrogen, vacuum, and oxygen environments. When the MoS(2) FETs were exposed to oxygen, the on-current decreased and the threshold voltage shifted in the positive gate bias direction as a result of electrons being trapped by the adsorbed oxygen at the MoS(2) surface. In contrast, the electrical properties of the MoS(2) FETs changed only slightly in the different environments when a passivation layer was created using polymethyl methacrylate (PMMA). Specifically, the carrier concentration of unpassivated devices was reduced to 6.5 x 10(15) cm(-2) in oxygen from 16.3 x 10(15) cm(-2) in nitrogen environment. However, in PMMA-passivated devices, the carrier concentration remained nearly unchanged in the range of 1-3 x 10(15) cm(-2) regardless of the environment. Our study suggests that surface passivation is important for MoS(2)-based electronic devices. FAU - Park, Woanseo AU - Park W AD - Department of Physics and Astronomy, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-747, Korea. FAU - Park, Juhun AU - Park J FAU - Jang, Jingon AU - Jang J FAU - Lee, Hyungwoo AU - Lee H FAU - Jeong, Hyunhak AU - Jeong H FAU - Cho, Kyungjune AU - Cho K FAU - Hong, Seunghun AU - Hong S FAU - Lee, Takhee AU - Lee T LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't DEP - 20130212 PL - England TA - Nanotechnology JT - Nanotechnology JID - 101241272 EDAT- 2013/02/14 06:00 MHDA- 2013/02/14 06:01 CRDT- 2013/02/14 06:00 PHST- 2013/02/14 06:00 [entrez] PHST- 2013/02/14 06:00 [pubmed] PHST- 2013/02/14 06:01 [medline] AID - 10.1088/0957-4484/24/9/095202 [doi] PST - ppublish SO - Nanotechnology. 2013 Mar 8;24(9):095202. doi: 10.1088/0957-4484/24/9/095202. Epub 2013 Feb 12.