PMID- 23452235 OWN - NLM STAT- MEDLINE DCOM- 20131231 LR - 20200930 IS - 1530-6992 (Electronic) IS - 1530-6984 (Linking) VI - 13 IP - 4 DP - 2013 Apr 10 TI - PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1). PG - 1578-87 LID - 10.1021/nl304753n [doi] AB - PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs. FAU - Liu, Yao AU - Liu Y AD - Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States. FAU - Tolentino, Jason AU - Tolentino J FAU - Gibbs, Markelle AU - Gibbs M FAU - Ihly, Rachelle AU - Ihly R FAU - Perkins, Craig L AU - Perkins CL FAU - Liu, Yu AU - Liu Y FAU - Crawford, Nathan AU - Crawford N FAU - Hemminger, John C AU - Hemminger JC FAU - Law, Matt AU - Law M LA - eng PT - Journal Article PT - Research Support, U.S. Gov't, Non-P.H.S. DEP - 20130307 PL - United States TA - Nano Lett JT - Nano letters JID - 101088070 RN - 0 (Selenium Compounds) RN - 12069-00-0 (lead selenide) RN - 2P299V784P (Lead) SB - IM MH - Air MH - Equipment Design MH - Lead/*chemistry MH - Particle Size MH - Quantum Dots/*chemistry MH - Selenium Compounds/*chemistry MH - *Transistors, Electronic EDAT- 2013/03/05 06:00 MHDA- 2014/01/01 06:00 CRDT- 2013/03/05 06:00 PHST- 2013/03/05 06:00 [entrez] PHST- 2013/03/05 06:00 [pubmed] PHST- 2014/01/01 06:00 [medline] AID - 10.1021/nl304753n [doi] PST - ppublish SO - Nano Lett. 2013 Apr 10;13(4):1578-87. doi: 10.1021/nl304753n. Epub 2013 Mar 7.