PMID- 23489053
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20130926
LR  - 20130410
IS  - 1520-5126 (Electronic)
IS  - 0002-7863 (Linking)
VI  - 135
IP  - 14
DP  - 2013 Apr 10
TI  - Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor 
      deposition.
PG  - 5304-7
LID - 10.1021/ja4013485 [doi]
AB  - The controlled synthesis of highly crystalline MoS2 atomic layers remains a 
      challenge for the practical applications of this emerging material. Here, we 
      developed an approach for synthesizing MoS2 flakes in rhomboid shape with 
      controlled number of layers by the layer-by-layer sulfurization of MoO2 
      microcrystals. The obtained MoS2 flakes showed high crystallinity with crystal 
      domain size of ~10 mum, significantly larger than the grain size of MoS2 grown by 
      other methods. As a result of the high crystallinity, the performance of 
      back-gated field effect transistors (FETs) made on these MoS2 flakes was 
      comparable to that of FETs based on mechanically exfoliated flakes. This simple 
      approach opens up a new avenue for controlled synthesis of MoS2 atomic layers and 
      will make this highly crystalline material easily accessible for fundamental 
      aspects and various applications.
FAU - Wang, Xinsheng
AU  - Wang X
AD  - Key Lab of Organic Optoelectronics & Molecular Engineering, Department of 
      Chemistry, Tsinghua University, Beijing 100084, China.
FAU - Feng, Hongbin
AU  - Feng H
FAU - Wu, Yongmin
AU  - Wu Y
FAU - Jiao, Liying
AU  - Jiao L
LA  - eng
PT  - Journal Article
DEP - 20130327
PL  - United States
TA  - J Am Chem Soc
JT  - Journal of the American Chemical Society
JID - 7503056
EDAT- 2013/03/16 06:00
MHDA- 2013/03/16 06:01
CRDT- 2013/03/16 06:00
PHST- 2013/03/16 06:00 [entrez]
PHST- 2013/03/16 06:00 [pubmed]
PHST- 2013/03/16 06:01 [medline]
AID - 10.1021/ja4013485 [doi]
PST - ppublish
SO  - J Am Chem Soc. 2013 Apr 10;135(14):5304-7. doi: 10.1021/ja4013485. Epub 2013 Mar 
      27.