PMID- 23618953
OWN - NLM
STAT- MEDLINE
DCOM- 20131029
LR  - 20130426
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 24
IP  - 21
DP  - 2013 May 31
TI  - Nanowire-based field effect transistors for terahertz detection and imaging 
      systems.
PG  - 214005
LID - 10.1088/0957-4484/24/21/214005 [doi]
AB  - The development of self-assembled nanostructure technologies has recently opened 
      the way towards a wide class of semiconductor integrated devices, with 
      progressively optimized performances and the potential for a widespread range of 
      electronic and photonic applications. Here we report on the development of field 
      effect transistors (FETs) based on semiconductor nanowires (NWs) as 
      highly-sensitive room-temperature plasma-wave broadband terahertz (THz) 
      detectors. The electromagnetic radiation at 0.3 THz is funneled onto a broadband 
      bow-tie antenna, whose lobes are connected to the source and gate FET electrodes. 
      The oscillating electric field experienced by the channel electrons, combined 
      with the charge density modulation by the gate electrode, results in a 
      source-drain signal rectification, which can be read as a DC signal output. We 
      investigated the influence of Se-doping concentration of InAs NWs on the 
      detection performances, reaching responsivity values higher than 100 V W(-)(1), with 
      noise-equivalent-power of  approximately 10(-)(9) W Hz((-)(1/2)). Transmission imaging experiments at 0.3 
      THz show the good reliability and sensitivity of the devices in a real practical 
      application.
FAU - Romeo, L
AU  - Romeo L
AD  - NEST, Scuola Normale Superiore and CNR-Istituto Nanoscienze, Piazza San Silvestro 
      12, I-56127 Pisa, Italy. lorenzo.romeo@sns.it
FAU - Coquillat, D
AU  - Coquillat D
FAU - Pea, M
AU  - Pea M
FAU - Ercolani, D
AU  - Ercolani D
FAU - Beltram, F
AU  - Beltram F
FAU - Sorba, L
AU  - Sorba L
FAU - Knap, W
AU  - Knap W
FAU - Tredicucci, A
AU  - Tredicucci A
FAU - Vitiello, M S
AU  - Vitiello MS
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20130425
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
MH  - Crystallization/methods
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Materials Testing
MH  - Nanotechnology/*instrumentation
MH  - Nanowires/*chemistry/*radiation effects
MH  - Particle Size
MH  - Radiation Dosage
MH  - Terahertz Imaging/*instrumentation
MH  - Terahertz Radiation
MH  - Terahertz Spectroscopy/*instrumentation
MH  - Transducers
MH  - *Transistors, Electronic
EDAT- 2013/04/27 06:00
MHDA- 2013/10/30 06:00
CRDT- 2013/04/27 06:00
PHST- 2013/04/27 06:00 [entrez]
PHST- 2013/04/27 06:00 [pubmed]
PHST- 2013/10/30 06:00 [medline]
AID - 10.1088/0957-4484/24/21/214005 [doi]
PST - ppublish
SO  - Nanotechnology. 2013 May 31;24(21):214005. doi: 10.1088/0957-4484/24/21/214005. 
      Epub 2013 Apr 25.