PMID- 23787674 OWN - NLM STAT- MEDLINE DCOM- 20140128 LR - 20181023 IS - 1094-4087 (Electronic) IS - 1094-4087 (Linking) VI - 21 IP - 12 DP - 2013 Jun 17 TI - Nanosecond pulsed laser damage characteristics of HfO2/SiO2 high reflection coatings irradiated from crystal-film interface. PG - 14867-75 LID - 10.1364/OE.21.014867 [doi] AB - The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface. FAU - Cheng, Xinbin AU - Cheng X AD - Key laboratory of advanced micro-structure materials, Ministry of Education, Shanghai, 200092, China. FAU - Jiao, Hongfei AU - Jiao H FAU - Lu, Jiangtao AU - Lu J FAU - Ma, Bin AU - Ma B FAU - Wang, Zhanshan AU - Wang Z LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't PL - United States TA - Opt Express JT - Optics express JID - 101137103 RN - 0 (Membranes, Artificial) RN - 0 (Oxides) RN - 3C4Z4KG52T (hafnium oxide) RN - 7631-86-9 (Silicon Dioxide) RN - X71938L1DO (Hafnium) SB - IM MH - Crystallography MH - Equipment Design MH - Equipment Failure Analysis MH - Hafnium/*radiation effects MH - *Lasers MH - *Lenses MH - Materials Testing MH - *Membranes, Artificial MH - Oxides/*radiation effects MH - Silicon Dioxide/*radiation effects MH - Surface Properties/radiation effects EDAT- 2013/06/22 06:00 MHDA- 2014/01/29 06:00 CRDT- 2013/06/22 06:00 PHST- 2013/06/22 06:00 [entrez] PHST- 2013/06/22 06:00 [pubmed] PHST- 2014/01/29 06:00 [medline] AID - 257988 [pii] AID - 10.1364/OE.21.014867 [doi] PST - ppublish SO - Opt Express. 2013 Jun 17;21(12):14867-75. doi: 10.1364/OE.21.014867.