PMID- 23858846
OWN - NLM
STAT- MEDLINE
DCOM- 20130801
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 13
IP  - 5
DP  - 2013 May
TI  - A four-bit-per-cell program method with substrate-bias assisted hot electron 
      injection for charge trap flash memory devices.
PG  - 3293-7
AB  - We propose a four-bit-per-cell program method using a two-step sequence with 
      substrate-bias assisted hot electron (SAHE) injection into the charge trap flash 
      memory devices in order to overcome the limitations of conventional four-bit 
      program methods, which use channel hot electron (CHE) injection. With this 
      proposed method, a localized charge injection near the junction edge with an 
      acceptable read margin was clearly observed, along with a threshold voltage 
      difference of 1 V between the forward and the reverse read. In addition, a 
      multi-level storage was easily obtained using a drain voltage step of 1 V at each 
      level of the three programmed states, along with a fast program time of 1 micros. 
      Finally, by using charge pumping methods, we directly observed the detailed 
      information on the spatial distribution of the local threshold voltage in each 
      level of the four states, for each physical bit, as a function of the program 
      voltage.
FAU - An, Ho-Myoung
AU  - An HM
AD  - School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seoul 
      136-701, Korea.
FAU - Kim, Hee-Dong
AU  - Kim HD
FAU - Kim, Byungcheul
AU  - Kim B
FAU - Kim, Tae Geun
AU  - Kim TG
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
SB  - IM
MH  - *Computer Storage Devices
MH  - Electron Transport
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Information Storage and Retrieval/*methods
MH  - Molecular Conformation
MH  - Nanotechnology/*instrumentation
MH  - Signal Processing, Computer-Assisted/*instrumentation
MH  - Static Electricity
EDAT- 2013/07/19 06:00
MHDA- 2013/08/02 06:00
CRDT- 2013/07/18 06:00
PHST- 2013/07/18 06:00 [entrez]
PHST- 2013/07/19 06:00 [pubmed]
PHST- 2013/08/02 06:00 [medline]
AID - 10.1166/jnn.2013.7242 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2013 May;13(5):3293-7. doi: 10.1166/jnn.2013.7242.