PMID- 23882787
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20130905
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 13
IP  - 8
DP  - 2013 Aug
TI  - Real-time pulse measurement of nano-scale field effect transistors: cancellation 
      of displacement current and extraction of coupling capacitance.
PG  - 5513-6
AB  - Real-time pulse measurements of nano-scale field effect transistors (FETs) are 
      reported. We demonstrate the direct monitoring of the real-time current of 
      bottom-up assembled silicon nanowire FET and top-down fabricated gate-all-around 
      silicon nanowire FET, both with the diameter of approximately 50 nm. We 
      demonstrate that the displacement current can be cancelled out from the measured 
      pulse responses. On the other hand, the displacement current also can be utilized 
      to obtain the coupling capacitance between the gate and source of the FETs.
FAU - Kim, Dae Won
AU  - Kim DW
AD  - School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 
      136-701, Korea.
FAU - Nam, In Cheol
AU  - Nam IC
FAU - Kim, Hee Tae
AU  - Kim HT
FAU - Hwang, Dong Hoon
AU  - Hwang DH
FAU - Kang, Myung Gil
AU  - Kang MG
FAU - Hong, Byoung Hak
AU  - Hong BH
FAU - Lee, Seong Joo
AU  - Lee SJ
FAU - Lee, Jae Hyun
AU  - Lee JH
FAU - Whang, Dongmok
AU  - Whang D
FAU - Hwang, Sung Woo
AU  - Hwang SW
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2013/07/26 06:00
MHDA- 2013/07/26 06:01
CRDT- 2013/07/26 06:00
PHST- 2013/07/26 06:00 [entrez]
PHST- 2013/07/26 06:00 [pubmed]
PHST- 2013/07/26 06:01 [medline]
AID - 10.1166/jnn.2013.7047 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2013 Aug;13(8):5513-6. doi: 10.1166/jnn.2013.7047.