PMID- 23924186
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20140928
LR  - 20140204
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 7
IP  - 9
DP  - 2013 Sep 24
TI  - Electric stress-induced threshold voltage instability of multilayer MoS2 field 
      effect transistors.
PG  - 7751-8
LID - 10.1021/nn402348r [doi]
AB  - We investigated the gate bias stress effects of multilayered MoS2 field effect 
      transistors (FETs) with a back-gated configuration. The electrical stability of 
      the MoS2 FETs can be significantly influenced by the electrical stress type, 
      relative sweep rate, and stress time in an ambient environment. Specifically, 
      when a positive gate bias stress was applied to the MoS2 FET, the current of the 
      device decreased and its threshold shifted in the positive gate bias direction. 
      In contrast, with a negative gate bias stress, the current of the device 
      increased and the threshold shifted in the negative gate bias direction. The gate 
      bias stress effects were enhanced when a gate bias was applied for a longer time 
      or when a slower sweep rate was used. These phenomena can be explained by the 
      charge trapping due to the adsorption or desorption of oxygen and/or water on the 
      MoS2 surface with a positive or negative gate bias, respectively, under an 
      ambient environment. This study will be helpful in understanding the 
      electrical-stress-induced instability of the MoS2-based electronic devices and 
      will also give insight into the design of desirable devices for electronics 
      applications.
FAU - Cho, Kyungjune
AU  - Cho K
AD  - Department of Physics and Astronomy, Seoul National University , Gwanak-ro, 
      Gwanak-gu, Seoul 151-744, Korea.
FAU - Park, Woanseo
AU  - Park W
FAU - Park, Juhun
AU  - Park J
FAU - Jeong, Hyunhak
AU  - Jeong H
FAU - Jang, Jingon
AU  - Jang J
FAU - Kim, Tae-Young
AU  - Kim TY
FAU - Hong, Woong-Ki
AU  - Hong WK
FAU - Hong, Seunghun
AU  - Hong S
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20130812
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
EDAT- 2013/08/09 06:00
MHDA- 2013/08/09 06:01
CRDT- 2013/08/09 06:00
PHST- 2013/08/09 06:00 [entrez]
PHST- 2013/08/09 06:00 [pubmed]
PHST- 2013/08/09 06:01 [medline]
AID - 10.1021/nn402348r [doi]
PST - ppublish
SO  - ACS Nano. 2013 Sep 24;7(9):7751-8. doi: 10.1021/nn402348r. Epub 2013 Aug 12.