PMID- 23969942
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20140421
LR  - 20130916
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 5
IP  - 19
DP  - 2013 Oct 7
TI  - A facile route to Si nanowire gate-all-around field effect transistors with a 
      steep subthreshold slope.
PG  - 8968-72
LID - 10.1039/c3nr02552g [doi]
AB  - We present a facile CMOS-compatible fabrication of lateral gate-all-around (GAA) 
      field effect transistors (FETs) based on concentric Si-SiO(2)/N(++)Si 
      core-multi-shell nanowires (NWs). Si-SiO(2)/N(++)Si core-multi-shell NWs were 
      prepared by sequential Si NW growth, thermal oxidation and Si deposition 
      processes in a single chamber. The GAA NW FET was then fabricated using the Si 
      core, SiO(2) inner-shell, N(++) Si outer-shell as a channel, gate dielectric, and 
      gate electrode, respectively. A one-step wet etching process was able to define 
      the gate and source-drain contact regions. The SiNW GAA FET clearly exhibits a 
      geometry-dependent gating effect and a steep subthreshold slope due to the low 
      interface trapped charge density at the interface of the Si core and the SiO(2) 
      shell. Our proposed SiNW GAA structures offer new opportunities for 
      low-energy-consumption digital device applications.
FAU - Lee, Jae-Hyun
AU  - Lee JH
AD  - SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 
      440-746, Korea. dwhang@skku.edu.
FAU - Kim, Byung-Sung
AU  - Kim BS
FAU - Choi, Soon-Hyung
AU  - Choi SH
FAU - Jang, Yamujin
AU  - Jang Y
FAU - Hwang, Sung Woo
AU  - Hwang SW
FAU - Whang, Dongmok
AU  - Whang D
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20130822
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2013/08/24 06:00
MHDA- 2013/08/24 06:01
CRDT- 2013/08/24 06:00
PHST- 2013/08/24 06:00 [entrez]
PHST- 2013/08/24 06:00 [pubmed]
PHST- 2013/08/24 06:01 [medline]
AID - 10.1039/c3nr02552g [doi]
PST - ppublish
SO  - Nanoscale. 2013 Oct 7;5(19):8968-72. doi: 10.1039/c3nr02552g. Epub 2013 Aug 22.