PMID- 24016184
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20140530
LR  - 20131022
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 7
IP  - 10
DP  - 2013 Oct 22
TI  - Gate-controlled spin-orbit interaction in inas high-electron mobility transistor 
      layers epitaxially transferred onto Si substrates.
PG  - 9106-14
LID - 10.1021/nn403715p [doi]
AB  - We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron 
      mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. 
      Successful epitaxial transfer of the multilayered structure after separation from 
      an original substrate ensures that the InAs HEMT maintains a robust bonding 
      interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V 
      s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals 
      that a Rashba SOI parameter (alpha) can be manipulated using a gate electric field 
      for the purpose of spin field-effect transistor operation. An important finding 
      is that the alpha value increases by about 30% in the InAs HEMT structure that has 
      been transferred when compared to the as-grown structure. First-principles 
      calculations indicate that the main causes of the large improvement in alpha are the 
      bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large 
      band gap and the strain relaxation of the InAs channel layer during epitaxial 
      transfer. The experimental results presented in this study offer a technological 
      platform for the integration of III-V heterostructures onto Si substrates, 
      permitting the spintronic devices to merge with standard Si circuitry and 
      technology.
FAU - Kim, Kyung-Ho
AU  - Kim KH
AD  - Spin Convergence Research Center, Korea Institute of Science and Technology 
      (KIST), Seoul 136-791, Korea.
FAU - Um, Doo-Seung
AU  - Um DS
FAU - Lee, Hochan
AU  - Lee H
FAU - Lim, Seongdong
AU  - Lim S
FAU - Chang, Joonyeon
AU  - Chang J
FAU - Koo, Hyun Cheol
AU  - Koo HC
FAU - Oh, Min-Wook
AU  - Oh MW
FAU - Ko, Hyunhyub
AU  - Ko H
FAU - Kim, Hyung-Jun
AU  - Kim HJ
LA  - eng
PT  - Journal Article
DEP - 20130923
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
EDAT- 2013/09/11 06:00
MHDA- 2013/09/11 06:01
CRDT- 2013/09/11 06:00
PHST- 2013/09/11 06:00 [entrez]
PHST- 2013/09/11 06:00 [pubmed]
PHST- 2013/09/11 06:01 [medline]
AID - 10.1021/nn403715p [doi]
PST - ppublish
SO  - ACS Nano. 2013 Oct 22;7(10):9106-14. doi: 10.1021/nn403715p. Epub 2013 Sep 23.