PMID- 24141361
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20140611
LR  - 20131022
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 24
IP  - 45
DP  - 2013 Nov 15
TI  - Controlling the electronic properties of SWCNT FETs via modification of the 
      substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film.
PG  - 455701
LID - 10.1088/0957-4484/24/45/455701 [doi]
AB  - We demonstrate the controllability of the electronic transport properties of 
      single-walled carbon nanotube (SWCNT) field effect transistors (FETs) via the use 
      of 10 nm thick atomic-layer-deposited aluminum oxide (Al2O3) gate dielectric 
      films, where the substrate surfaces were modified with differently functionalized 
      self-assembled monolayers (SAMs) prior to their growth, namely SAMs with 
      hydrophobic (-CH3) or hydrophilic (-OH) groups. Al2O3 grown on a hydrophilic 
      surface causes the SWCNT FETs to keep their intrinsic p-type transfer 
      characteristics by alleviating the electron-doping effect originating from 
      defects in the Al2O3 film. However, the SAM with methyl groups increases the 
      defect density of the Al2O3 film, enhancing the n-type transfer characteristics 
      and inducing ambipolar to n-type behavior in the SWCNT FETs. In this work, we 
      find clues about the distribution of charged defects in the Al2O3 film, which 
      strongly influences the transfer characteristics of the SWCNT FETs, by measuring 
      the thickness-dependent flat band voltages.
FAU - Kim, Joonsung
AU  - Kim J
AD  - Department of Chemical and Biological Engineering, Korea University, Seoul 
      136-701, Korea.
FAU - Yoon, Jangyeol
AU  - Yoon J
FAU - Na, Junhong
AU  - Na J
FAU - Yee, Seongmin
AU  - Yee S
FAU - Kim, Gyu Tae
AU  - Kim GT
FAU - Ha, Jeong Sook
AU  - Ha JS
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20131018
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2013/10/22 06:00
MHDA- 2013/10/22 06:01
CRDT- 2013/10/22 06:00
PHST- 2013/10/22 06:00 [entrez]
PHST- 2013/10/22 06:00 [pubmed]
PHST- 2013/10/22 06:01 [medline]
AID - 10.1088/0957-4484/24/45/455701 [doi]
PST - ppublish
SO  - Nanotechnology. 2013 Nov 15;24(45):455701. doi: 10.1088/0957-4484/24/45/455701. 
      Epub 2013 Oct 18.