PMID- 24506842
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20140214
LR  - 20211021
IS  - 1931-7573 (Print)
IS  - 1556-276X (Electronic)
IS  - 1556-276X (Linking)
VI  - 9
IP  - 1
DP  - 2014 Feb 8
TI  - Analytical modeling of uniaxial strain effects on the performance of double-gate 
      graphene nanoribbon field-effect transistors.
PG  - 65
LID - 10.1186/1556-276X-9-65 [doi]
AB  - : The effects of uniaxial tensile strain on the ultimate performance of a 
      dual-gated graphene nanoribbon field-effect transistor (GNR-FET) are studied 
      using a fully analytical model based on effective mass approximation and 
      semiclassical ballistic transport. The model incorporates the effects of edge 
      bond relaxation and third nearest neighbor (3NN) interaction. To calculate the 
      performance metrics of GNR-FETs, analytical expressions are used for the charge 
      density, quantum capacitance, and drain current as functions of both gate and 
      drain voltages. It is found that the current under a fixed bias can change 
      several times with applied uniaxial strain and these changes are strongly related 
      to strain-induced changes in both band gap and effective mass of the GNR. 
      Intrinsic switching delay time, cutoff frequency, and Ion/Ioff ratio are also 
      calculated for various uniaxial strain values. The results indicate that the 
      variation in both cutoff frequency and Ion/Ioff ratio versus applied tensile 
      strain inversely corresponds to that of the band gap and effective mass. Although 
      a significant high frequency and switching performance can be achieved by 
      uniaxial strain engineering, tradeoff issues should be carefully considered.
FAU - Kliros, George S
AU  - Kliros GS
AD  - Department of Aeronautical Sciences, Division of Electronics, Electric Power and 
      Telecommunication Engineering, Hellenic Air-Force Academy, Dekeleia Attica 
      GR-1010, Greece. gskliros@ieee.org.
LA  - eng
PT  - Journal Article
DEP - 20140208
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC3923746
EDAT- 2014/02/11 06:00
MHDA- 2014/02/11 06:01
PMCR- 2014/02/08
CRDT- 2014/02/11 06:00
PHST- 2013/09/29 00:00 [received]
PHST- 2014/01/30 00:00 [accepted]
PHST- 2014/02/11 06:00 [entrez]
PHST- 2014/02/11 06:00 [pubmed]
PHST- 2014/02/11 06:01 [medline]
PHST- 2014/02/08 00:00 [pmc-release]
AID - 1556-276X-9-65 [pii]
AID - 10.1186/1556-276X-9-65 [doi]
PST - epublish
SO  - Nanoscale Res Lett. 2014 Feb 8;9(1):65. doi: 10.1186/1556-276X-9-65.