PMID- 24509565
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20141001
LR  - 20211021
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 4
DP  - 2014 Feb 10
TI  - Metal-semiconductor barrier modulation for high photoresponse in transition metal 
      dichalcogenide field effect transistors.
PG  - 4041
LID - 10.1038/srep04041 [doi]
LID - 4041
AB  - A gate-controlled metal-semiconductor barrier modulation and its effect on 
      carrier transport were investigated in two-dimensional (2D) transition metal 
      dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was 
      observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain 
      voltage due to a high electric field along the channel for separating 
      photo-excited charge carriers and (ii) at the certain gate voltage due to the 
      optimized barriers for the collection of photo-excited charge carriers at metal 
      contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a 
      low temperature measurement. An ohmic contact behavior and drain-induced barrier 
      lowering (DIBL) were clearly observed in MoS2 FET. In contrast, a 
      Schottky-to-ohmic contact transition was observed in WSe2 FET as the gate voltage 
      increases, due to the change of majority carrier transport from holes to 
      electrons. The gate-dependent barrier modulation effectively controls the carrier 
      transport, demonstrating its great potential in 2D TMDCs for electronic and 
      optoelectronic applications.
FAU - Li, Hua-Min
AU  - Li HM
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
FAU - Lee, Dae-Yeong
AU  - Lee DY
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
FAU - Choi, Min Sup
AU  - Choi MS
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
FAU - Qu, Deshun
AU  - Qu D
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
FAU - Liu, Xiaochi
AU  - Liu X
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
FAU - Ra, Chang-Ho
AU  - Ra CH
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
FAU - Yoo, Won Jong
AU  - Yoo WJ
AD  - Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology 
      (SAINT), Department of Nano Science and Technology, Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon 440-746, Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20140210
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC3918928
EDAT- 2014/02/11 06:00
MHDA- 2014/02/11 06:01
PMCR- 2014/02/10
CRDT- 2014/02/11 06:00
PHST- 2013/08/02 00:00 [received]
PHST- 2014/01/24 00:00 [accepted]
PHST- 2014/02/11 06:00 [entrez]
PHST- 2014/02/11 06:00 [pubmed]
PHST- 2014/02/11 06:01 [medline]
PHST- 2014/02/10 00:00 [pmc-release]
AID - srep04041 [pii]
AID - 10.1038/srep04041 [doi]
PST - epublish
SO  - Sci Rep. 2014 Feb 10;4:4041. doi: 10.1038/srep04041.