PMID- 24511184
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211021
IS  - 0897-4756 (Print)
IS  - 1520-5002 (Electronic)
IS  - 0897-4756 (Linking)
VI  - 26
IP  - 2
DP  - 2014 Jan 28
TI  - High Performance, Low Temperature Solution-Processed Barium and Strontium Doped 
      Oxide Thin Film Transistors.
PG  - 1195-1203
AB  - Amorphous mixed metal oxides are emerging as high performance semiconductors for 
      thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO 
      (IGZO), being one of the most widely studied and best performing systems. Here, 
      we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as 
      alternative, semiconducting channel layers and compare their performance of the 
      electrical stress stability with IGZO. In films fabricated by solution-processing 
      from metal alkoxide precursors and annealed to 450  degrees C we achieve high 
      field-effect electron mobility up to 26 cm(2) V(-1) s(-1). We show that it is 
      possible to solution-process these materials at low process temperature (225-200 
       degrees C yielding mobilities up to 4.4 cm(2) V(-1) s(-1)) and demonstrate a facile 
      "ink-on-demand" process for these materials which utilizes the alcoholysis 
      reaction of alkyl metal precursors to negate the need for complex synthesis and 
      purification protocols. Electrical bias stress measurements which can serve as a 
      figure of merit for performance stability for a TFT device reveal Sr- and 
      Ba-doped semiconductors to exhibit enhanced electrical stability and reduced 
      threshold voltage shift compared to IGZO irrespective of the process temperature 
      and preparation method. This enhancement in stability can be attributed to the 
      higher Gibbs energy of oxidation of barium and strontium compared to gallium.
FAU - Banger, Kulbinder K
AU  - Banger KK
AD  - Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge 
      CB3 0HE, United Kingdom.
FAU - Peterson, Rebecca L
AU  - Peterson RL
AD  - Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge 
      CB3 0HE, United Kingdom.
FAU - Mori, Kiyotaka
AU  - Mori K
AD  - Panasonic Corporation , Osaka 571-8501, Japan.
FAU - Yamashita, Yoshihisa
AU  - Yamashita Y
AD  - Panasonic Corporation , Osaka 571-8501, Japan.
FAU - Leedham, Timothy
AU  - Leedham T
AD  - Multivalent Ltd. , Eriswell, Suffolk IP27 9BJ, United Kingdom.
FAU - Sirringhaus, Henning
AU  - Sirringhaus H
AD  - Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge 
      CB3 0HE, United Kingdom.
LA  - eng
PT  - Journal Article
DEP - 20131222
PL  - United States
TA  - Chem Mater
JT  - Chemistry of materials : a publication of the American Chemical Society
JID - 9884133
PMC - PMC3914394
EDAT- 2014/02/11 06:00
MHDA- 2014/02/11 06:01
CRDT- 2014/02/11 06:00
PHST- 2013/10/29 00:00 [received]
PHST- 2014/02/11 06:00 [entrez]
PHST- 2014/02/11 06:00 [pubmed]
PHST- 2014/02/11 06:01 [medline]
AID - 10.1021/cm4035837 [doi]
PST - ppublish
SO  - Chem Mater. 2014 Jan 28;26(2):1195-1203. doi: 10.1021/cm4035837. Epub 2013 Dec 
      22.