PMID- 24521999 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20141108 LR - 20140313 IS - 1361-6528 (Electronic) IS - 0957-4484 (Linking) VI - 25 IP - 9 DP - 2014 Mar 7 TI - The influence of fibril composition and dimension on the performance of paper gated oxide transistors. PG - 094007 LID - 10.1088/0957-4484/25/9/094007 [doi] AB - Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5). FAU - Pereira, L AU - Pereira L AD - CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica, Portugal. FAU - Gaspar, D AU - Gaspar D FAU - Guerin, D AU - Guerin D FAU - Delattre, A AU - Delattre A FAU - Fortunato, E AU - Fortunato E FAU - Martins, R AU - Martins R LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't DEP - 20140212 PL - England TA - Nanotechnology JT - Nanotechnology JID - 101241272 EDAT- 2014/02/14 06:00 MHDA- 2014/02/14 06:01 CRDT- 2014/02/14 06:00 PHST- 2014/02/14 06:00 [entrez] PHST- 2014/02/14 06:00 [pubmed] PHST- 2014/02/14 06:01 [medline] AID - 10.1088/0957-4484/25/9/094007 [doi] PST - ppublish SO - Nanotechnology. 2014 Mar 7;25(9):094007. doi: 10.1088/0957-4484/25/9/094007. Epub 2014 Feb 12.