PMID- 24576344
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20140306
LR  - 20211021
IS  - 1931-7573 (Print)
IS  - 1556-276X (Electronic)
IS  - 1556-276X (Linking)
VI  - 9
IP  - 1
DP  - 2014 Feb 28
TI  - Fabrication and electrical properties of MoS2 nanodisc-based back-gated field 
      effect transistors.
PG  - 100
LID - 10.1186/1556-276X-9-100 [doi]
AB  - Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative 
      semiconductor material for next-generation low-power nanoelectronic applications, 
      due to its special structure and large bandgap. Here, we report the fabrication 
      of large-area MoS2 nanodiscs and their incorporation into back-gated field effect 
      transistors (FETs) whose electrical properties we characterize. The MoS2 
      nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and 
      continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. 
      In addition, we find that the MoS2 nanodisc-based back-gated field effect 
      transistors with nickel electrodes achieve very high performance. The transistors 
      exhibit an on/off current ratio of up to 1.9 x 105, and a maximum 
      transconductance of up to 27 muS (5.4 muS/mum). Moreover, their mobility is as high 
      as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and 
      can be easily modulated by the back gate. The electrical properties of the MoS2 
      nanodisc transistors are better than or comparable to those values extracted from 
      single and multilayer MoS2 FETs.
FAU - Gu, Weixia
AU  - Gu W
FAU - Shen, Jiaoyan
AU  - Shen J
FAU - Ma, Xiying
AU  - Ma X
AD  - School of Mathematics and Physics, Suzhou University of Science and Technology, 
      1# Kerui Road, Suzhou, Jiangsu 215009, China. maxy@mail.usts.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20140228
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC3943990
EDAT- 2014/03/01 06:00
MHDA- 2014/03/01 06:01
PMCR- 2014/02/28
CRDT- 2014/03/01 06:00
PHST- 2014/01/28 00:00 [received]
PHST- 2014/02/19 00:00 [accepted]
PHST- 2014/03/01 06:00 [entrez]
PHST- 2014/03/01 06:00 [pubmed]
PHST- 2014/03/01 06:01 [medline]
PHST- 2014/02/28 00:00 [pmc-release]
AID - 1556-276X-9-100 [pii]
AID - 10.1186/1556-276X-9-100 [doi]
PST - epublish
SO  - Nanoscale Res Lett. 2014 Feb 28;9(1):100. doi: 10.1186/1556-276X-9-100.