PMID- 24707193
OWN - NLM
STAT- MEDLINE
DCOM- 20150126
LR  - 20211021
IS  - 1537-744X (Electronic)
IS  - 2356-6140 (Print)
IS  - 1537-744X (Linking)
VI  - 2014
DP  - 2014
TI  - 100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications.
PG  - 136340
LID - 10.1155/2014/136340 [doi]
LID - 136340
AB  - We report on high frequency (HF) and noise performances of AlSb/InAs high 
      electron mobility transistor (HEMT) with 100 nm gate length at room temperature 
      in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz 
      together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 
      12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 
      4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs 
      HEMT for high-frequency operation combined with low-noise performances in 
      ultra-low-power regime.
FAU - Gardes, Cyrille
AU  - Gardes C
AUID- ORCID: 0000-0003-4082-4752
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Bagumako, Sonia
AU  - Bagumako S
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Desplanque, Ludovic
AU  - Desplanque L
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Wichmann, Nicolas
AU  - Wichmann N
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Bollaert, Sylvain
AU  - Bollaert S
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Danneville, Francois
AU  - Danneville F
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Wallart, Xavier
AU  - Wallart X
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
FAU - Roelens, Yannick
AU  - Roelens Y
AUID- ORCID: 0000-0003-2451-2177
AD  - Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR 
      CNRS 8520, Universite Lille I, BP 60069, 59652 Villeneuve d'Ascq Cedex, France.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20140223
PL  - United States
TA  - ScientificWorldJournal
JT  - TheScientificWorldJournal
JID - 101131163
SB  - IM
MH  - Electric Power Supplies/*trends
MH  - *Electrons
MH  - Transistors, Electronic/*trends
PMC - PMC3953642
EDAT- 2014/04/08 06:00
MHDA- 2015/01/27 06:00
PMCR- 2014/02/23
CRDT- 2014/04/08 06:00
PHST- 2013/08/30 00:00 [received]
PHST- 2014/01/05 00:00 [accepted]
PHST- 2014/04/08 06:00 [entrez]
PHST- 2014/04/08 06:00 [pubmed]
PHST- 2015/01/27 06:00 [medline]
PHST- 2014/02/23 00:00 [pmc-release]
AID - 10.1155/2014/136340 [doi]
PST - epublish
SO  - ScientificWorldJournal. 2014 Feb 23;2014:136340. doi: 10.1155/2014/136340. 
      eCollection 2014.