PMID- 24813644
OWN - NLM
STAT- MEDLINE
DCOM- 20151023
LR  - 20200930
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 14
IP  - 6
DP  - 2014 Jun 11
TI  - Sensitivity enhancement of Si nanowire field effect transistor biosensors using 
      single trap phenomena.
PG  - 3504-9
LID - 10.1021/nl5010724 [doi]
AB  - Trapping-detrapping processes in nanostructures are generally considered to be 
      destabilizing factors. However, we discovered a positive role for a single trap 
      in the registration and transformation of useful signal. We use switching 
      kinetics of current fluctuations generated by a single trap in the dielectric of 
      liquid-gated nanowire field effect transistors (FETs) as a basic principle for a 
      novel highly sensitive approach to monitor the gate surface potential. An 
      increase in Si nanowire FET sensitivity of 400% was demonstrated.
FAU - Li, Jing
AU  - Li J
AD  - Peter Grunberg Institute(PGI-8), Forschungszentrum Julich , Julich 52425, 
      Germany.
FAU - Pud, Sergii
AU  - Pud S
FAU - Petrychuk, Michail
AU  - Petrychuk M
FAU - Offenhausser, Andreas
AU  - Offenhausser A
FAU - Vitusevich, Svetlana
AU  - Vitusevich S
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20140513
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
SB  - IM
MH  - Biosensing Techniques/*instrumentation/*methods
MH  - *Nanowires
MH  - *Transistors, Electronic
EDAT- 2014/05/13 06:00
MHDA- 2015/10/24 06:00
CRDT- 2014/05/13 06:00
PHST- 2014/05/13 06:00 [entrez]
PHST- 2014/05/13 06:00 [pubmed]
PHST- 2015/10/24 06:00 [medline]
AID - 10.1021/nl5010724 [doi]
PST - ppublish
SO  - Nano Lett. 2014 Jun 11;14(6):3504-9. doi: 10.1021/nl5010724. Epub 2014 May 13.