PMID- 24967826
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150511
LR  - 20140711
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 6
IP  - 15
DP  - 2014 Aug 7
TI  - Polarized photocurrent response in black phosphorus field-effect transistors.
PG  - 8978-83
LID - 10.1039/c4nr02164a [doi]
AB  - We investigate electrical transport and optoelectronic properties of field effect 
      transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a 
      few nanometers. In particular, we explore the anisotropic nature and photocurrent 
      generation mechanisms in BP FETs through spatial-, polarization-, gate-, and 
      bias-dependent photocurrent measurements. Our results reveal that the 
      photocurrent signals at BP-electrode junctions are mainly attributed to the 
      photovoltaic effect in the off-state and photothermoelectric effect in the 
      on-state, and their anisotropic feature primarily results from the 
      directional-dependent absorption of BP crystals.
FAU - Hong, Tu
AU  - Hong T
AD  - Department of Electrical Engineering and Computer Science, Vanderbilt University, 
      Nashville, TN 37235, USA. yaqiong.xu@vanderbilt.edu.
FAU - Chamlagain, Bhim
AU  - Chamlagain B
FAU - Lin, Wenzhi
AU  - Lin W
FAU - Chuang, Hsun-Jen
AU  - Chuang HJ
FAU - Pan, Minghu
AU  - Pan M
FAU - Zhou, Zhixian
AU  - Zhou Z
FAU - Xu, Ya-Qiong
AU  - Xu YQ
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2014/06/27 06:00
MHDA- 2014/06/27 06:01
CRDT- 2014/06/27 06:00
PHST- 2014/06/27 06:00 [entrez]
PHST- 2014/06/27 06:00 [pubmed]
PHST- 2014/06/27 06:01 [medline]
AID - 10.1039/c4nr02164a [doi]
PST - ppublish
SO  - Nanoscale. 2014 Aug 7;6(15):8978-83. doi: 10.1039/c4nr02164a.