PMID- 25111042
OWN - NLM
STAT- MEDLINE
DCOM- 20151030
LR  - 20200930
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 14
IP  - 10
DP  - 2014 Oct 8
TI  - Tunable transport gap in phosphorene.
PG  - 5733-9
LID - 10.1021/nl5025535 [doi]
AB  - In this article, we experimentally demonstrate that the transport gap of 
      phosphorene can be tuned monotonically from  approximately 0.3 to  approximately 1.0 eV when the flake 
      thickness is scaled down from bulk to a single layer. As a consequence, the ON 
      current, the OFF current, and the current ON/OFF ratios of phosphorene field 
      effect transistors (FETs) were found to be significantly impacted by the layer 
      thickness. The transport gap was determined from the transfer characteristics of 
      phosphorene FETs using a robust technique that has not been reported before. The 
      detailed mathematical model is also provided. By scaling the thickness of the 
      gate oxide, we were also able to demonstrate enhanced ambipolar conduction in 
      monolayer and few layer phosphorene FETs. The asymmetry of the electron and the 
      hole current was found to be dependent on the layer thickness that can be 
      explained by dynamic changes of the metal Fermi level with the energy band of 
      phosphorene depending on the layer number. We also extracted the Schottky barrier 
      heights for both the electron and the hole injection as a function of the layer 
      thickness. Finally, we discuss the dependence of field effect hole mobility of 
      phosphorene on temperature and carrier concentration.
FAU - Das, Saptarshi
AU  - Das S
AD  - Center for Nanoscale Material, double daggerMaterials Science Division, and  section signDivision of High 
      Energy Physics, Argonne National Laboratory , Argonne, Illinois 60439, United 
      States.
FAU - Zhang, Wei
AU  - Zhang W
FAU - Demarteau, Marcel
AU  - Demarteau M
FAU - Hoffmann, Axel
AU  - Hoffmann A
FAU - Dubey, Madan
AU  - Dubey M
FAU - Roelofs, Andreas
AU  - Roelofs A
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20140813
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - 27YLU75U4W (Phosphorus)
SB  - IM
EIN - Nano Lett. 2016 Mar 9;16(3):2122. PMID: 26835550
MH  - Electrons
MH  - Equipment Design
MH  - Nanostructures/chemistry
MH  - Phosphorus/*chemistry
MH  - *Transistors, Electronic
OTO - NOTNLM
OT  - Phosphorene
OT  - field effect transistor
OT  - mobility
OT  - transport gap
EDAT- 2014/08/12 06:00
MHDA- 2015/10/31 06:00
CRDT- 2014/08/12 06:00
PHST- 2014/08/12 06:00 [entrez]
PHST- 2014/08/12 06:00 [pubmed]
PHST- 2015/10/31 06:00 [medline]
AID - 10.1021/nl5025535 [doi]
PST - ppublish
SO  - Nano Lett. 2014 Oct 8;14(10):5733-9. doi: 10.1021/nl5025535. Epub 2014 Aug 13.