PMID- 25167845
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150521
LR  - 20200930
IS  - 1521-4095 (Electronic)
IS  - 0935-9648 (Linking)
VI  - 26
IP  - 38
DP  - 2014 Oct
TI  - Back gated multilayer InSe transistors with enhanced carrier mobilities via the 
      suppression of carrier scattering from a dielectric interface.
PG  - 6587-93
LID - 10.1002/adma.201402427 [doi]
AB  - The back gate multilayer InSe FETs exhibit ultrahigh carrier mobilities, 
      surpassing all the reported layer semiconductor based electronics with the same 
      device configuration, which is achieved by the suppression of the carrier 
      scattering from interfacial coulomb impurities or surface polar phonons at the 
      interface of an oxidized dielectric substrate. The room-temperature mobilities of 
      multilayer InSe transistors increase from 64 cm(2)V(-1)s(-1) to 1055 
      cm(2)V(-1)s(-1) using a bilayer dielectric of poly-(methyl methacrylate) 
      (PMMA)/Al2O3. The transistors also have high current on/off ratios of 1 x 10(8), 
      low standby power dissipation, and robust current saturation in a broad voltage 
      range.
CI  - (c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
FAU - Feng, Wei
AU  - Feng W
AD  - State Key Laboratory of Robotics and System, Harbin Institute of Technology, 
      Harbin, 150080, China; School of Materials Science and Engineering, Harbin 
      Institute of Technology, Harbin, 150080, China.
FAU - Zheng, Wei
AU  - Zheng W
FAU - Cao, Wenwu
AU  - Cao W
FAU - Hu, PingAn
AU  - Hu P
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20140828
PL  - Germany
TA  - Adv Mater
JT  - Advanced materials (Deerfield Beach, Fla.)
JID - 9885358
OTO - NOTNLM
OT  - carrier scatter
OT  - field-effect transistor
OT  - indium selenide
OT  - mobility
OT  - two dimensional layer semiconductor
EDAT- 2014/08/30 06:00
MHDA- 2014/08/30 06:01
CRDT- 2014/08/30 06:00
PHST- 2014/05/31 00:00 [received]
PHST- 2014/07/07 00:00 [revised]
PHST- 2014/08/30 06:00 [entrez]
PHST- 2014/08/30 06:00 [pubmed]
PHST- 2014/08/30 06:01 [medline]
AID - 10.1002/adma.201402427 [doi]
PST - ppublish
SO  - Adv Mater. 2014 Oct;26(38):6587-93. doi: 10.1002/adma.201402427. Epub 2014 Aug 
      28.