PMID- 25307846
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150512
LR  - 20141025
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 6
IP  - 22
DP  - 2014 Nov 21
TI  - Scalable graphene synthesised by plasma-assisted selective reaction on silicon 
      carbide for device applications.
PG  - 13861-9
LID - 10.1039/c4nr04486j [doi]
AB  - Graphene, a two-dimensional material with honeycomb arrays of carbon atoms, has 
      shown outstanding physical properties that make it a promising candidate material 
      for a variety of electronic applications. To date, several issues related to the 
      material synthesis and device fabrication need to be overcome. Despite the fact 
      that large-area graphene films synthesised by chemical vapour deposition (CVD) 
      can be grown with relatively few defects, the required transfer process creates 
      wrinkles and polymer residues that greatly reduce its performance in device 
      applications. Graphene synthesised on silicon carbide (SiC) has shown outstanding 
      mobility and has been successfully used to develop ultra-high frequency 
      transistors; however, this fabrication method is limited due to the use of costly 
      ultra-high vacuum (UHV) equipment that can reach temperatures over 1500  degrees C. Here, 
      we show a simple and novel approach to synthesise graphene on SiC substrates that 
      greatly reduces the temperature and vacuum requirements and allows the use of 
      equipment commonly used in the semiconductor processing industry. In this work, 
      we used plasma treatment followed by annealing in order to obtain large-scale 
      graphene films from bulk SiC. After exposure to N2 plasma, the annealing process 
      promotes the reaction of nitrogen ions with Si and the simultaneous condensation 
      of C on the surface of SiC. Eventually, a uniform, large-scale, n-type graphene 
      film with remarkable transport behaviour on the SiC wafer is achieved. 
      Furthermore, graphene field effect transistors (FETs) with high carrier 
      mobilities on SiC were also demonstrated in this study.
FAU - Tsai, Hsu-Sheng
AU  - Tsai HS
AD  - Department of Material Science and Engineering, National Tsing Hua University, 
      Hsinchu 30013, Taiwan. ylchueh@mx.nthu.edu.tw.
FAU - Lai, Chih-Chung
AU  - Lai CC
FAU - Medina, Henry
AU  - Medina H
FAU - Lin, Shih-Ming
AU  - Lin SM
FAU - Shih, Yu-Chuan
AU  - Shih YC
FAU - Chen, Yu-Ze
AU  - Chen YZ
FAU - Liang, Jenq-Horng
AU  - Liang JH
FAU - Chueh, Yu-Lun
AU  - Chueh YL
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2014/10/14 06:00
MHDA- 2014/10/14 06:01
CRDT- 2014/10/14 06:00
PHST- 2014/10/14 06:00 [entrez]
PHST- 2014/10/14 06:00 [pubmed]
PHST- 2014/10/14 06:01 [medline]
AID - 10.1039/c4nr04486j [doi]
PST - ppublish
SO  - Nanoscale. 2014 Nov 21;6(22):13861-9. doi: 10.1039/c4nr04486j.