PMID- 25329532
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150330
LR  - 20160622
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 8
IP  - 11
DP  - 2014 Nov 25
TI  - Ambipolar phosphorene field effect transistor.
PG  - 11730-8
LID - 10.1021/nn505868h [doi]
AB  - In this article, we demonstrate enhanced electron and hole transport in few-layer 
      phosphorene field effect transistors (FETs) using titanium as the source/drain 
      contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect 
      mobility values were extracted to be  approximately 38 cm(2)/Vs for electrons and  approximately 172 cm(2)/Vs 
      for the holes. On the basis of our experimental data, we also comprehensively 
      discuss how the contact resistances arising due to the Schottky barriers at the 
      source and the drain end effect the different regime of the device 
      characteristics and ultimately limit the ON state performance. We also propose 
      and implement a novel technique for extracting the transport gap as well as the 
      Schottky barrier height at the metal-phosphorene contact interface from the 
      ambipolar transfer characteristics of the phosphorene FETs. This robust technique 
      is applicable to any ultrathin body semiconductor which demonstrates symmetric 
      ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, 
      chemical doping free, and fully complementary logic inverter based on ambipolar 
      phosphorene FETs.
FAU - Das, Saptarshi
AU  - Das S
AD  - Center for Nanoscale Material and double daggerDivision of High Energy Physics, Argonne 
      National Laboratory , Argonne, Illinois 60439, United States.
FAU - Demarteau, Marcel
AU  - Demarteau M
FAU - Roelofs, Andreas
AU  - Roelofs A
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20141023
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
EIN - ACS Nano. 2016 Feb 23;10(2):2984. PMID: 26840360
OTO - NOTNLM
OT  - ambipolar field effect transistor
OT  - contact resistance
OT  - logic inverter
OT  - phosphorene
EDAT- 2014/10/21 06:00
MHDA- 2014/10/21 06:01
CRDT- 2014/10/21 06:00
PHST- 2014/10/21 06:00 [entrez]
PHST- 2014/10/21 06:00 [pubmed]
PHST- 2014/10/21 06:01 [medline]
AID - 10.1021/nn505868h [doi]
PST - ppublish
SO  - ACS Nano. 2014 Nov 25;8(11):11730-8. doi: 10.1021/nn505868h. Epub 2014 Oct 23.