PMID- 25382854
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150331
LR  - 20141210
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 6
IP  - 23
DP  - 2014 Dec 10
TI  - Growth of large-scale and thickness-modulated MoS(2) nanosheets.
PG  - 21215-22
LID - 10.1021/am506198b [doi]
AB  - Two-dimensional MoS2 is a promising material for next-generation electronic and 
      optoelectronic devices due to its unique electrical and optical properties 
      including the band gap modulation with film thickness. Although MoS2 has shown 
      excellent properties, wafer-scale production with layer control from single to 
      few layers has yet to be demonstrated. The present study explored the large-scale 
      and thickness-modulated growth of atomically thin MoS2 on Si/SiO2 substrates 
      using a two-step sputtering-CVD method. Our process exhibited wafer-scale 
      fabrication and successful thickness modulation of MoS2 layers from monolayer 
      (0.72 nm) to multilayer (12.69 nm) with high uniformity. Electrical measurements 
      on MoS2 field effect transistors (FETs) revealed a p-type semiconductor behavior 
      with much higher field effect mobility and current on/off ratio as compared to 
      previously reported CVD grown MoS2-FETs and amorphous silicon (a-Si) thin film 
      transistors. Our results show that sputter-CVD is a viable method to synthesize 
      large-area, high-quality, and layer-controlled MoS2 that can be adapted in 
      conventional Si-based microfabrication technology and future flexible, 
      high-temperature, and radiation hard electronics/optoelectronics.
FAU - Choudhary, Nitin
AU  - Choudhary N
AD  - Department of Materials Science and Engineering, University of North Texas , 
      Denton, Texas 76207, United States.
FAU - Park, Juhong
AU  - Park J
FAU - Hwang, Jun Yeon
AU  - Hwang JY
FAU - Choi, Wonbong
AU  - Choi W
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20141126
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - MoS2
OT  - PVD-CVD
OT  - field effect transistors
OT  - thin films
EDAT- 2014/11/11 06:00
MHDA- 2014/11/11 06:01
CRDT- 2014/11/11 06:00
PHST- 2014/11/11 06:00 [entrez]
PHST- 2014/11/11 06:00 [pubmed]
PHST- 2014/11/11 06:01 [medline]
AID - 10.1021/am506198b [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21215-22. doi: 10.1021/am506198b. 
      Epub 2014 Nov 26.