PMID- 25492495
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150407
LR  - 20150105
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 7
IP  - 4
DP  - 2015 Jan 28
TI  - Breakdown of metallic single-wall carbon nanotube paths by NiO nanoparticle point 
      etching for high performance thin film transistors.
PG  - 1280-4
LID - 10.1039/c4nr06057a [doi]
AB  - A selective and highly local etching of the metallic single-wall carbon nanotube 
      (SWCNT) was demonstrated by using a NiO nanoparticle (NP) point etching 
      technique. Following the NiO NP point etching at temperatures ranging from 250 to 
      350  degrees C, the current on/off ratios of the SWCNT field effect transistors (FETs) 
      increased over 50-fold from  approximately 10 s to  approximately 10(4). Furthermore, the unavoidable drop in 
      on-state current due to the reduction in current paths could be minimized to 
      within one order of magnitude. Atomic force microscopy and Raman spectroscopy 
      studies supported the view that the improvement in FET performance was attributed 
      to the efficient and localized etching of metallic SWCNT paths solely around the 
      NiO NPs, resulting in minimal damage to the semiconducting SWCNT networks.
FAU - Li, Shisheng
AU  - Li S
AD  - Nanotube Research Center, National Institute of Advanced Industrial Science and 
      Technology (AIST) Central 5, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8565, Japan. 
      shunsuke-sakurai@aist.go.jp.
FAU - Sakurai, Shunsuke
AU  - Sakurai S
FAU - Futaba, Don N
AU  - Futaba DN
FAU - Hata, Kenji
AU  - Hata K
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2014/12/11 06:00
MHDA- 2014/12/11 06:01
CRDT- 2014/12/11 06:00
PHST- 2014/12/11 06:00 [entrez]
PHST- 2014/12/11 06:00 [pubmed]
PHST- 2014/12/11 06:01 [medline]
AID - 10.1039/c4nr06057a [doi]
PST - ppublish
SO  - Nanoscale. 2015 Jan 28;7(4):1280-4. doi: 10.1039/c4nr06057a.