PMID- 25514177
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150423
LR  - 20150127
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 9
IP  - 1
DP  - 2015 Jan 27
TI  - Field effect transistors with current saturation and voltage gain in ultrathin 
      ReS2.
PG  - 363-70
LID - 10.1021/nn505354a [doi]
AB  - We report the fabrication and device characteristics of exfoliated, few-layer, 
      dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type 
      behavior with a room temperature Ion/I(off) of 10(5). Many devices were studied 
      with a maximum intrinsic mobility of 12 cm(2) . V(-1) . s(-1) at room temperature 
      and 26 cm(2) . V(-1) . s(-1) at 77 K. The Cr/Au-ReS2 contact resistance 
      determined using the transfer length method is gate-bias dependent and ranges 
      from 175 kOmega . mum to 5 kOmega . mum, and shows an exponential dependence on back-gate 
      voltage indicating Schottky barriers at the source and drain contacts. Dual-gated 
      ReS2 FETs demonstrate current saturation, voltage gain, and a subthreshold swing 
      of 148 mV/decade.
FAU - Corbet, Chris M
AU  - Corbet CM
AD  - Department of Electrical Engineering, The University of Texas at Austin , Austin, 
      Texas 78712, United States.
FAU - McClellan, Connor
AU  - McClellan C
FAU - Rai, Amritesh
AU  - Rai A
FAU - Sonde, Sushant Sudam
AU  - Sonde SS
FAU - Tutuc, Emanuel
AU  - Tutuc E
FAU - Banerjee, Sanjay K
AU  - Banerjee SK
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20141224
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - TMD
OT  - gain
OT  - mobility
OT  - rhenium disulfide
OT  - saturation
OT  - transistor
EDAT- 2014/12/17 06:00
MHDA- 2014/12/17 06:01
CRDT- 2014/12/17 06:00
PHST- 2014/12/17 06:00 [entrez]
PHST- 2014/12/17 06:00 [pubmed]
PHST- 2014/12/17 06:01 [medline]
AID - 10.1021/nn505354a [doi]
PST - ppublish
SO  - ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24.