PMID- 25607653
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150625
LR  - 20201001
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 15
IP  - 2
DP  - 2015 Feb 11
TI  - Electrostatically induced superconductivity at the surface of WS(2).
PG  - 1197-202
LID - 10.1021/nl504314c [doi]
AB  - We investigate transport through ionic liquid gated field effect transistors 
      (FETs) based on exfoliated crystals of semiconducting WS2. Upon electron 
      accumulation, at surface densities close to, or just larger than, 10(14) cm(-2), 
      transport exhibits metallic behavior with the surface resistivity decreasing 
      pronouncedly upon cooling. A detailed characterization as a function of 
      temperature and magnetic field clearly shows the occurrence of a gate-induced 
      superconducting transition below a critical temperature Tc  approximately  4 K, a finding that 
      represents the first demonstration of superconductivity in tungsten-based 
      semiconducting transition metal dichalcogenides. We investigate the nature of 
      superconductivity and find significant inhomogeneity, originating from the local 
      detaching of the frozen ionic liquid from the WS2 surface. Despite the 
      inhomogeneity, we find that in all cases where a fully developed zero resistance 
      state is observed, different properties of the devices exhibit a behavior 
      characteristic of a Berezinskii-Kosterlitz-Thouless transition, as it could be 
      expected in view of the two-dimensional nature of the electrostatically 
      accumulated electron system.
FAU - Jo, Sanghyun
AU  - Jo S
AD  - DQMP and GAP, Universite de Geneve , 24 quai Ernest Ansermet, CH-1211 Geneva, 
      Switzerland.
FAU - Costanzo, Davide
AU  - Costanzo D
FAU - Berger, Helmuth
AU  - Berger H
FAU - Morpurgo, Alberto F
AU  - Morpurgo AF
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150126
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
OTO - NOTNLM
OT  - WS2
OT  - ionic liquid gating
OT  - potential fluctuation, BKT transition
OT  - superconductivity
OT  - transition metal dichalcogenides
EDAT- 2015/01/22 06:00
MHDA- 2015/01/22 06:01
CRDT- 2015/01/22 06:00
PHST- 2015/01/22 06:00 [entrez]
PHST- 2015/01/22 06:00 [pubmed]
PHST- 2015/01/22 06:01 [medline]
AID - 10.1021/nl504314c [doi]
PST - ppublish
SO  - Nano Lett. 2015 Feb 11;15(2):1197-202. doi: 10.1021/nl504314c. Epub 2015 Jan 26.