PMID- 25684335
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150626
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 5
DP  - 2015 Feb 16
TI  - Aluminum nitride nanowire light emitting diodes: Breaking the fundamental 
      bottleneck of deep ultraviolet light sources.
PG  - 8332
LID - 10.1038/srep08332 [doi]
LID - 8332
AB  - Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices 
      for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N 
      planar devices drastically decays when approaching the AlN end, including low 
      internal quantum efficiencies (IQEs) and high device operation voltages. Here we 
      show that these challenges can be addressed by utilizing nitrogen (N) polar 
      Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the 
      synthesis conditions, a record IQE of 80% can be realized with N-polar AlN 
      nanowires, which is nearly ten times higher compared to high quality planar AlN. 
      The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were 
      achieved, with a turn on voltage of about 6 V, which is significantly lower than 
      the commonly observed 20 - 40 V. This can be ascribed to both efficient Mg doping 
      by controlling the nanowire growth rate and N-polarity induced internal 
      electrical field that favors hole injection. In the end, high performance N-polar 
      AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also 
      demonstrated.
FAU - Zhao, S
AU  - Zhao S
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Connie, A T
AU  - Connie AT
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Dastjerdi, M H T
AU  - Dastjerdi MH
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Kong, X H
AU  - Kong XH
AD  - Department of Physics, McGill University, 3600 University Street, Montreal, 
      Quebec, Canada H3A 2T8.
FAU - Wang, Q
AU  - Wang Q
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Djavid, M
AU  - Djavid M
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Sadaf, S
AU  - Sadaf S
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Liu, X D
AU  - Liu XD
AD  - Facility for Electron Microscopy Research, McGill University, 3640 University 
      Street, Montreal, Quebec H3A 0C7.
FAU - Shih, I
AU  - Shih I
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
FAU - Guo, H
AU  - Guo H
AD  - Department of Physics, McGill University, 3600 University Street, Montreal, 
      Quebec, Canada H3A 2T8.
FAU - Mi, Z
AU  - Mi Z
AD  - Department of Electrical and Computer Engineering, McGill University, 3480 
      University Street, Montreal, Quebec, Canada H3A 0E9.
LA  - eng
PT  - Journal Article
DEP - 20150216
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC4329565
EDAT- 2015/02/17 06:00
MHDA- 2015/02/17 06:01
PMCR- 2015/02/16
CRDT- 2015/02/17 06:00
PHST- 2014/10/14 00:00 [received]
PHST- 2015/01/05 00:00 [accepted]
PHST- 2015/02/17 06:00 [entrez]
PHST- 2015/02/17 06:00 [pubmed]
PHST- 2015/02/17 06:01 [medline]
PHST- 2015/02/16 00:00 [pmc-release]
AID - srep08332 [pii]
AID - 10.1038/srep08332 [doi]
PST - epublish
SO  - Sci Rep. 2015 Feb 16;5:8332. doi: 10.1038/srep08332.