PMID- 25736097
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150423
LR  - 20150306
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 26
IP  - 12
DP  - 2015 Mar 27
TI  - Hydrogen plasma-mediated modification of the electrical transport properties of 
      ZnO nanowire field effect transistors.
PG  - 125202
LID - 10.1088/0957-4484/26/12/125202 [doi]
AB  - We investigated the effects of hydrogen plasma treatment on the electrical 
      transport properties of ZnO nanowire field effect transistors (FETs) with a back 
      gate configuration. After hydrogen plasma treatment of the FET devices, the 
      effective carrier density and mobility of the nanowire FETs increased with a 
      threshold voltage shift toward a negative gate bias direction. This can be 
      attributed to the desorption of oxygen molecules adsorbed on the surface of the 
      nanowire channel, to passivation and to doping effects due to the incorporation 
      of energetic hydrogen ions generated in plasma.
FAU - Hong, Woong-Ki
AU  - Hong WK
AD  - Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, 
      Korea.
FAU - Yoon, Jongwon
AU  - Yoon J
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150304
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2015/03/05 06:00
MHDA- 2015/03/05 06:01
CRDT- 2015/03/05 06:00
PHST- 2015/03/05 06:00 [entrez]
PHST- 2015/03/05 06:00 [pubmed]
PHST- 2015/03/05 06:01 [medline]
AID - 10.1088/0957-4484/26/12/125202 [doi]
PST - ppublish
SO  - Nanotechnology. 2015 Mar 27;26(12):125202. doi: 10.1088/0957-4484/26/12/125202. 
      Epub 2015 Mar 4.