PMID- 25854416
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150831
LR  - 20150416
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 26
IP  - 17
DP  - 2015 May 1
TI  - Contact properties of field-effect transistors based on indium arsenide nanowires 
      thinner than 16 nm.
PG  - 175202
LID - 10.1088/0957-4484/26/17/175202 [doi]
AB  - With the scaling down of field effect transistors (FETs) to improve performance, 
      the contact between the electrodes and the channel becomes more and more 
      important. Contact properties of FETs based on ultrathin InAs NWs (with the 
      diameter ranging from sub-7 nm to 16 nm) are investigated here. Chromium (Cr) and 
      nickel (Ni) are proven to form ohmic contact with the ultrathin InAs NWs, in 
      contrast to a recent report (Razavieh A et al ACS Nano 8 6281). Furthermore, the 
      contact resistance is found to depend on the NW diameter and the contact metals, 
      which between Cr and InAs NWs increases more rapidly than that between Ni and 
      InAs NWs when the NW diameter decreases. The origins of the contact resistance 
      difference for the two kinds of metals are studied and NixInAs is believed to 
      play an important role. Based on our results, it is advantageous to use Ni as 
      contact metal for ultrathin NWs. We also observe that the FETs are still working 
      in the diffusive regime even when the channel length is scaled down to 50 nm.
FAU - Shi, Tuanwei
AU  - Shi T
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices and Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China.
FAU - Fu, Mengqi
AU  - Fu M
FAU - Pan, Dong
AU  - Pan D
FAU - Guo, Yao
AU  - Guo Y
FAU - Zhao, Jianhua
AU  - Zhao J
FAU - Chen, Qing
AU  - Chen Q
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150409
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2015/04/10 06:00
MHDA- 2015/04/10 06:01
CRDT- 2015/04/10 06:00
PHST- 2015/04/10 06:00 [entrez]
PHST- 2015/04/10 06:00 [pubmed]
PHST- 2015/04/10 06:01 [medline]
AID - 10.1088/0957-4484/26/17/175202 [doi]
PST - ppublish
SO  - Nanotechnology. 2015 May 1;26(17):175202. doi: 10.1088/0957-4484/26/17/175202. 
      Epub 2015 Apr 9.