PMID- 25942873
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150528
LR  - 20190715
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 14
IP  - 10
DP  - 2014 Oct
TI  - Top-down fabrication of 4H-SiC nano-channel field effect transistors.
PG  - 7821-3
AB  - 4H-SiC nano-channel field effect transistors (FETs) with various widths of 3 
      mum-50 nm have been fabricated by "top-down" approach using electron-beam 
      lithography process. It has been demonstrated that the gate controllability of 
      the SiC FETs is improved with decreasing channel width. In the fabricated devices 
      the threshold voltage V(th) for the 50 nm-width nano-channel FETs shows a 
      positive shift (DeltaV(th) = 1.4 V) with respect to that of the reference FETs. The 
      on-current degradation of the SiC nano-channel FETs is found to be 1.5 times 
      lower than that of the reference FETs at elevated temperatures up to 450 K. This 
      attributed to the improved heat dissipation of the nano-channel structure with a 
      large surface to volume ratio.
FAU - Kang, Min-Seok
AU  - Kang MS
FAU - Lee, Jung-Ho
AU  - Lee JH
FAU - Bahng, Wook
AU  - Bahng W
FAU - Kim, Nam-Kyun
AU  - Kim NK
FAU - Koo, Sang-Mo
AU  - Koo SM
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2015/05/07 06:00
MHDA- 2015/05/07 06:01
CRDT- 2015/05/07 06:00
PHST- 2015/05/07 06:00 [entrez]
PHST- 2015/05/07 06:00 [pubmed]
PHST- 2015/05/07 06:01 [medline]
AID - 10.1166/jnn.2014.9387 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2014 Oct;14(10):7821-3. doi: 10.1166/jnn.2014.9387.