PMID- 26048553
OWN - NLM
STAT- MEDLINE
DCOM- 20161213
LR  - 20161230
IS  - 1936-1335 (Electronic)
IS  - 1936-1327 (Linking)
VI  - 8
DP  - 2015
TI  - Electronic Biosensors Based on III-Nitride Semiconductors.
PG  - 149-69
LID - 10.1146/annurev-anchem-071114-040247 [doi]
AB  - We review recent advances of AlGaN/GaN high-electron-mobility transistor 
      (HEMT)-based electronic biosensors. We discuss properties and fabrication of 
      III-nitride-based biosensors. Because of their superior biocompatibility and 
      aqueous stability, GaN-based devices are ready to be implemented as 
      next-generation biosensors. We review surface properties, cleaning, and 
      passivation as well as different pathways toward functionalization, and 
      critically analyze III-nitride-based biosensors demonstrated in the literature, 
      including those detecting DNA, bacteria, cancer antibodies, and toxins. We also 
      discuss the high potential of these biosensors for monitoring living cardiac, 
      fibroblast, and nerve cells. Finally, we report on current developments of 
      covalent chemical functionalization of III-nitride devices. Our review concludes 
      with a short outlook on future challenges and projected implementation directions 
      of GaN-based HEMT biosensors.
FAU - Kirste, Ronny
AU  - Kirste R
AD  - Department of Materials Science and Engineering, North Carolina State University, 
      Raleigh, North Carolina 27695; email: ivanisevic@ncsu.edu.
FAU - Rohrbaugh, Nathaniel
AU  - Rohrbaugh N
FAU - Bryan, Isaac
AU  - Bryan I
FAU - Bryan, Zachary
AU  - Bryan Z
FAU - Collazo, Ramon
AU  - Collazo R
FAU - Ivanisevic, Albena
AU  - Ivanisevic A
LA  - eng
PT  - Journal Article
PT  - Review
DEP - 20150527
PL  - United States
TA  - Annu Rev Anal Chem (Palo Alto Calif)
JT  - Annual review of analytical chemistry (Palo Alto, Calif.)
JID - 101508602
RN  - 0 (Aluminum Compounds)
RN  - 0 (aluminum gallium nitride)
RN  - CH46OC8YV4 (Gallium)
SB  - IM
MH  - Aluminum Compounds/*chemistry
MH  - *Biosensing Techniques
MH  - *Electronics
MH  - Gallium/*chemistry
MH  - Humans
MH  - *Semiconductors
OTO - NOTNLM
OT  - biosensors
OT  - field-effect transistors
OT  - nitrides
OT  - semiconductors
OT  - surfaces
EDAT- 2015/06/07 06:00
MHDA- 2016/12/15 06:00
CRDT- 2015/06/07 06:00
PHST- 2015/06/07 06:00 [entrez]
PHST- 2015/06/07 06:00 [pubmed]
PHST- 2016/12/15 06:00 [medline]
AID - 10.1146/annurev-anchem-071114-040247 [doi]
PST - ppublish
SO  - Annu Rev Anal Chem (Palo Alto Calif). 2015;8:149-69. doi: 
      10.1146/annurev-anchem-071114-040247. Epub 2015 May 27.