PMID- 26194107
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160111
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 5
DP  - 2015 Jul 21
TI  - Efficient Direct Reduction of Graphene Oxide by Silicon Substrate.
PG  - 12306
LID - 10.1038/srep12306 [doi]
LID - 12306
AB  - Graphene has been studied for various applications due to its excellent 
      properties. Graphene film fabrication from solutions of graphene oxide (GO) have 
      attracted considerable attention because these procedures are suitable for mass 
      production. GO, however, is an insulator, and therefore a reduction process is 
      required to make the GO film conductive. These reduction procedures require 
      chemical reducing agents or high temperature annealing. Herein, we report a novel 
      direct and simple reduction procedure of GO by silicon, which is the most widely 
      used material in the electronics industry. In this study, we also used silicon 
      nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was 
      confirmed by various characterization methods. Furthermore, the silicon wafer was 
      also used as a reducing template to create a reduced GO (rGO) film on a silicon 
      substrate. By this process, a pure rGO film can be formed without the impurities 
      that normally come from chemical reducing agents. This is an easy and 
      environmentally friendly method to prepare large scale graphene films on Si 
      substrates.
FAU - Lee, Su Chan
AU  - Lee SC
AD  - Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, 
      Yonsei University, Seoul 120-749, South Korea.
FAU - Some, Surajit
AU  - Some S
AD  - 1] Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, 
      Yonsei University, Seoul 120-749, South Korea [2] Department of Dyestuff 
      Technology, Institute of Chemical Technology, Matunga, Mumbai-400 019, India.
FAU - Kim, Sung Wook
AU  - Kim SW
AD  - Global E3 Institute and Department of Materials Science and Engineering, Yonsei 
      University, Seoul 120-749, South Korea.
FAU - Kim, Sun Jun
AU  - Kim SJ
AD  - Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, 
      Yonsei University, Seoul 120-749, South Korea.
FAU - Seo, Jungmok
AU  - Seo J
AD  - Nanobio Device Laboratory, School of Electrical and Electronic Engineering, 
      Yonsei University, Seoul 120-749, South Korea.
FAU - Lee, Jooho
AU  - Lee J
AD  - Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, 
      Yonsei University, Seoul 120-749, South Korea.
FAU - Lee, Taeyoon
AU  - Lee T
AD  - Nanobio Device Laboratory, School of Electrical and Electronic Engineering, 
      Yonsei University, Seoul 120-749, South Korea.
FAU - Ahn, Jong-Hyun
AU  - Ahn JH
AD  - School of Electrical and Electronic Engineering, Yonsei University, Seoul 
      120-749, South Korea.
FAU - Choi, Heon-Jin
AU  - Choi HJ
AD  - Global E3 Institute and Department of Materials Science and Engineering, Yonsei 
      University, Seoul 120-749, South Korea.
FAU - Jun, Seong Chan
AU  - Jun SC
AD  - Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, 
      Yonsei University, Seoul 120-749, South Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150721
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC4648420
EDAT- 2015/07/22 06:00
MHDA- 2015/07/22 06:01
PMCR- 2015/07/21
CRDT- 2015/07/22 06:00
PHST- 2014/10/16 00:00 [received]
PHST- 2015/06/24 00:00 [accepted]
PHST- 2015/07/22 06:00 [entrez]
PHST- 2015/07/22 06:00 [pubmed]
PHST- 2015/07/22 06:01 [medline]
PHST- 2015/07/21 00:00 [pmc-release]
AID - srep12306 [pii]
AID - 10.1038/srep12306 [doi]
PST - epublish
SO  - Sci Rep. 2015 Jul 21;5:12306. doi: 10.1038/srep12306.