PMID- 26222209
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20151222
LR  - 20150826
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 9
IP  - 8
DP  - 2015 Aug 25
TI  - Optoelectrical Molybdenum Disulfide (MoS2)--Ferroelectric Memories.
PG  - 8089-98
LID - 10.1021/acsnano.5b02078 [doi]
AB  - In this study, we fabricated and tested electronic and memory properties of 
      field-effect transistors (FETs) based on monolayer or few-layer molybdenum 
      disulfide (MoS2) on a lead zirconium titanate (Pb(Zr,Ti)O3, PZT) substrate that 
      was used as a gate dielectric. MoS2-PZT FETs exhibit a large hysteresis of 
      electronic transport with high ON/OFF ratios. We demonstrate that the interplay 
      of polarization and interfacial phenomena strongly affects the electronic 
      behavior and memory characteristics of MoS2-PZT FETs. We further demonstrate that 
      MoS2-PZT memories have a number of advantages and unique features compared to 
      their graphene-based counterparts as well as commercial ferroelectric 
      random-access memories (FeRAMs), such as nondestructive data readout, low 
      operation voltage, wide memory window and the possibility to write and erase them 
      both electrically and optically. This dual optoelectrical operation of these 
      memories can simplify the device architecture and offer additional practical 
      functionalities, such as an instant optical erase of large data arrays that is 
      unavailable for many conventional memories.
FAU - Lipatov, Alexey
AU  - Lipatov A
AD  - Department of Chemistry, double daggerDepartment of Physics and Astronomy, and  section signNebraska 
      Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 
      68588, United States.
FAU - Sharma, Pankaj
AU  - Sharma P
AD  - Department of Chemistry, double daggerDepartment of Physics and Astronomy, and  section signNebraska 
      Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 
      68588, United States.
FAU - Gruverman, Alexei
AU  - Gruverman A
AD  - Department of Chemistry, double daggerDepartment of Physics and Astronomy, and  section signNebraska 
      Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 
      68588, United States.
FAU - Sinitskii, Alexander
AU  - Sinitskii A
AD  - Department of Chemistry, double daggerDepartment of Physics and Astronomy, and  section signNebraska 
      Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 
      68588, United States.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20150729
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - ferroelectric memory
OT  - field-effect transistor
OT  - hysteresis
OT  - lead zirconium titanate
OT  - molybdenum disulfide
EDAT- 2015/07/30 06:00
MHDA- 2015/07/30 06:01
CRDT- 2015/07/30 06:00
PHST- 2015/07/30 06:00 [entrez]
PHST- 2015/07/30 06:00 [pubmed]
PHST- 2015/07/30 06:01 [medline]
AID - 10.1021/acsnano.5b02078 [doi]
PST - ppublish
SO  - ACS Nano. 2015 Aug 25;9(8):8089-98. doi: 10.1021/acsnano.5b02078. Epub 2015 Jul 
      29.