PMID- 26235962
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160112
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 5
DP  - 2015 Aug 3
TI  - Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating.
PG  - 12534
LID - 10.1038/srep12534 [doi]
LID - 12534
AB  - Functionalities of two-dimensional (2D) crystals based on semiconducting 
      transition metal dichalcogenides (TMDs) have now stemmed from simple field effect 
      transistors (FETs) to a variety of electronic and opto-valleytronic devices, and 
      even to superconductivity. Among them, superconductivity is the least studied 
      property in TMDs due to methodological difficulty accessing it in different TMD 
      species. Here, we report the systematic study of superconductivity in MoSe2, 
      MoTe2 and WS2 by ionic gating in different regimes. Electrostatic gating using 
      ionic liquid was able to induce superconductivity in MoSe2 but not in MoTe2 
      because of inefficient electron accumulation limited by electronic band 
      alignment. Alternative gating using KClO4/polyethylene glycol enabled a crossover 
      from surface doping to bulk doping, which induced superconductivities in MoTe2 
      and WS2 electrochemically. These new varieties greatly enriched the TMD 
      superconductor families and unveiled critical methodology to expand the 
      capability of ionic gating to other materials.
FAU - Shi, Wu
AU  - Shi W
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Ye, Jianting
AU  - Ye J
AD  - 1] Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan [2] Zernike 
      Institute for Advanced Materials, University of Groningen, The Netherlands.
FAU - Zhang, Yijin
AU  - Zhang Y
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Suzuki, Ryuji
AU  - Suzuki R
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Yoshida, Masaro
AU  - Yoshida M
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Miyazaki, Jun
AU  - Miyazaki J
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Inoue, Naoko
AU  - Inoue N
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Saito, Yu
AU  - Saito Y
AD  - Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
FAU - Iwasa, Yoshihiro
AU  - Iwasa Y
AD  - 1] Quantum-Phase Electronics Center and Department of Applied Physics, The 
      University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan [2] Center 
      for Emergent Matter Science, RIKEN, Hirosawa 2-1, Wako 351-0198, Japan.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150803
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC4522664
EDAT- 2015/08/04 06:00
MHDA- 2015/08/04 06:01
PMCR- 2015/08/03
CRDT- 2015/08/04 06:00
PHST- 2015/02/12 00:00 [received]
PHST- 2015/07/02 00:00 [accepted]
PHST- 2015/08/04 06:00 [entrez]
PHST- 2015/08/04 06:00 [pubmed]
PHST- 2015/08/04 06:01 [medline]
PHST- 2015/08/03 00:00 [pmc-release]
AID - srep12534 [pii]
AID - 10.1038/srep12534 [doi]
PST - epublish
SO  - Sci Rep. 2015 Aug 3;5:12534. doi: 10.1038/srep12534.