PMID- 26262556
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20151222
LR  - 20150826
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 9
IP  - 8
DP  - 2015 Aug 25
TI  - Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation 
      by Treatment with Alkanethiol Molecules.
PG  - 8044-53
LID - 10.1021/acsnano.5b04400 [doi]
AB  - We investigated the physical properties of molybdenum disulfide (MoS2) atomic 
      crystals with a sulfur vacancy passivation after treatment with alkanethiol 
      molecules including their electrical, Raman, and photoluminescence (PL) 
      characteristics. MoS2, one of the transition metal dichalcogenide materials, is a 
      promising two-dimensional semiconductor material with good physical properties. 
      It is known that sulfur vacancies exist in MoS2, resulting in the n-type behavior 
      of MoS2. The sulfur vacancies on the MoS2 surface tend to form covalent bonds 
      with sulfur-containing groups. In this study, we deposited alkanethiol molecules 
      on MoS2 field effect transistors (FETs) and then characterized the electrical 
      properties of the devices before and after the alkanethiol treatment. We observed 
      that the electrical characteristics of MoS2 FETs dramatically changed after the 
      alkanethiol treatment. We also observed that the Raman and PL spectra of MoS2 
      films changed after the alkanethiol treatment. These effects are attributed to 
      the thiol (-SH) end groups in alkanethiols bonding at sulfur vacancy sites, thus 
      altering the physical properties of the MoS2. This study will help us better 
      understand the electrical and optical properties of MoS2 and suggest a way of 
      tailoring the properties of MoS2 by passivating a sulfur vacancy with thiol 
      molecules.
FAU - Cho, Kyungjune
AU  - Cho K
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Min, Misook
AU  - Min M
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Kim, Tae-Young
AU  - Kim TY
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Jeong, Hyunhak
AU  - Jeong H
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Pak, Jinsu
AU  - Pak J
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Kim, Jae-Keun
AU  - Kim JK
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Jang, Jingon
AU  - Jang J
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
FAU - Yun, Seok Joon
AU  - Yun SJ
AD  - IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, 
      Sungkyunkwan University , Suwon 440-746, Korea.
FAU - Lee, Young Hee
AU  - Lee YH
AD  - IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, 
      Sungkyunkwan University , Suwon 440-746, Korea.
FAU - Hong, Woong-Ki
AU  - Hong WK
AD  - Jeonju Center, Korea Basic Science Institute , Jeonju, Jeollabuk-do 561-180, 
      Korea.
FAU - Lee, Takhee
AU  - Lee T
AD  - Department of Physics and Astronomy and Institute of Applied Physics, Seoul 
      National University , Seoul 151-744, Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150813
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - electronic transport
OT  - field effect transistor
OT  - molecule adsorption
OT  - molybdenum disulfide
EDAT- 2015/08/12 06:00
MHDA- 2015/08/12 06:01
CRDT- 2015/08/12 06:00
PHST- 2015/08/12 06:00 [entrez]
PHST- 2015/08/12 06:00 [pubmed]
PHST- 2015/08/12 06:01 [medline]
AID - 10.1021/acsnano.5b04400 [doi]
PST - ppublish
SO  - ACS Nano. 2015 Aug 25;9(8):8044-53. doi: 10.1021/acsnano.5b04400. Epub 2015 Aug 
      13.